參數(shù)資料
型號(hào)： NDP6020
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： 35 A, 20 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 376K
代理商： NDP6020
November 1996
NDP6020 / NDB6020
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Parameter
NDP6020
NDB6020
Units
V
DSS
V
DGR
Drain-Source Voltage
20
V
Drain-Gate Voltage (R
GS
< 1 M
)
Gate-Source Voltage - Continuous
20
V
V
GSS
I
D
±8
V
Drain Current
- Continuous
35
A
- Pulsed
100
P
D
Total Power Dissipation @ T
C
= 25
°
C
60
W
Derate above 25
°
C
0.4
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
NDP6020 Rev.C
35 A, 20 V. R
DS(ON)
= 0.023
@ V
GS
= 4.5 V
R
DS(ON)
= 0.028
@ V
GS
= 2.7 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through
hole and surface mount applications.
These logic level N-Channel enhancement mode power
field effect transistors are produced using National's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters,
PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
S
D
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor（52A,30V，0.00135Ω）(N溝道邏輯電平增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流52A, 漏源電壓30V，導(dǎo)通電阻0.0135Ω）)
NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor（-30A,-30V，0.042Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-30A, 漏源電壓-30V，導(dǎo)通電阻0.042Ω）)
NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor（48A,50V，0.025Ω）(N溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流48A, 漏源電壓50V，導(dǎo)通電阻0.025Ω）)
NDB6050 N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDP6020P 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6020P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220
NDP6020P_Q 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030L 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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