參數(shù)資料
型號： NDC632
廠商： Fairchild Semiconductor Corporation
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： P溝道增強模式的邏輯電平場效應(yīng)晶體管
文件頁數(shù)： 6/10頁
文件大?。?/td> 254K
代理商： NDC632
NDC632P Rev. B1
-15
-12
-9
-6
-3
0
0
2
4
6
8
10
12
I , DRAIN CURRENT (A)
g
J
F
V =- 5V
125°C
25°C
Figure 13. Transconductance Variation with
Drain Current and Temperature
.
Figure 16. Maximum Safe Operating. Area
Typical Electrical and Thermal Characteristics
(continued)
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
1
1.5
2
2.5
3
-
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
V = -4.5V
D
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0
0.5
1
1.5
2
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
0.1
0.2
0.5
1
2
5
10
20
30
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
-V , DRAIN-SOURCE VOLTAGE (V)
-
D
RDS(ON) LIMIT
V = -4.5V
SINGLE PULSE
R = See Note 1c
T = 25°C
1s
100ms
100us
1ms
DC
10ms
Figure 14. SuperSOT
TM
-6 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad Area.
Figure 15. Maximum Steady-State Drain Current
versus Copper Mounting Pad Area.
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R JA
R JA
T - T = P * R (t)
P(pk)
t
1
t
2
r
Figure 17. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
相關(guān)PDF資料
PDF描述
NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC652 P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC7001 Dual N & P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDC632P 功能描述:MOSFET P-Channel FET LL Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC632P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6
NDC632P_F095 功能描述:MOSFET -20V -2.7A P-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC651N 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC651N_F095 功能描述:MOSFET 30V 3.2A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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