參數(shù)資料
型號(hào)： NDC7001
廠商： Fairchild Semiconductor Corporation
英文描述： Dual N & P-Channel Enhancement Mode Field Effect Transistor
中文描述： 雙N
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 284K
代理商： NDC7001
March 1996
NDC7001C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
N-Channel
P-Channel
Units
V
DSS
Drain-Source Voltage
50
-50
V
V
GSS
I
D
Gate-Source Voltage - Continuous
20
-20
V
Drain Current - Continuous
(Note 1a)
0.51
-0.34
A
- Pulsed
1.5
-1
P
D
Maximum Power Dissipation
(Note 1a)
0.96
W
(Note 1b)
0.9
(Note 1c)
0.7
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
130
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
NDC7001C.SAM
These dual N and P-channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
These devices is particularly suited for low voltage, low
current, switching, and power supply applications.
N-Channel 0.51A, 50V, R
DS(ON)
= 2
@ V
GS
=10V
P-Channel -0.34A, -50V. R
DS(ON)
= 5
@ V
GS
=-10V.
High density cell design for low R
DS(ON)
.
Proprietary SuperSOT
TM
-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High saturation current
.
1
5
4
6
3
2
SuperSOT
TM
-6
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDC7002 Dual N-Channel Enhancement Mode Field Effect Transistor
NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor
NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor
NDC ISOLATED RESISTOR NETWORK
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDC7001C 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC7001C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6
NDC7001C 制造商:Fairchild Semiconductor Corporation 功能描述:50V COMP N/P 2/5 O SSOT6
NDC7001C_Q 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC7002 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
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