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參數(shù)資料
| 型號： | NDC7001C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 510 mA, 60 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 284K |
| 代理商： | NDC7001C |
March 1996
NDC7001C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
N-Channel
P-Channel
Units
V
DSS
Drain-Source Voltage
50
-50
V
V
GSS
I
D
Gate-Source Voltage - Continuous
20
-20
V
Drain Current - Continuous
(Note 1a)
0.51
-0.34
A
- Pulsed
1.5
-1
P
D
Maximum Power Dissipation
(Note 1a)
0.96
W
(Note 1b)
0.9
(Note 1c)
0.7
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
130
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
NDC7001C.SAM
These dual N and P-channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
These devices is particularly suited for low voltage, low
current, switching, and power supply applications.
N-Channel 0.51A, 50V, R
DS(ON)
= 2
@ V
GS
=10V
P-Channel -0.34A, -50V. R
DS(ON)
= 5
@ V
GS
=-10V.
High density cell design for low R
DS(ON)
.
Proprietary SuperSOT
TM
-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High saturation current
.
1
5
4
6
3
2
SuperSOT
TM
-6
1997 Fairchild Semiconductor Corporation
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| NDC7002 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDC7002N | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDC7003P | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDC | ISOLATED RESISTOR NETWORK |
| NDF0610 | P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，10Ω）(P溝道增強型MOS場效應管（漏電流-0.18A, 漏源電壓-60V，導通電阻10Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDC7001C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6 |
| NDC7001C | 制造商:Fairchild Semiconductor Corporation 功能描述:50V COMP N/P 2/5 O SSOT6 |
| NDC7001C_Q | 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDC7002 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDC7002N | 功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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