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參數(shù)資料
| 型號： | NDC7001C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 510 mA, 60 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 284K |
| 代理商： | NDC7001C |
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
V
DS
= 40 V, V
GS
= 0 V
N-Ch
50
V
P-Ch
-50
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
T
J
= 125°C
500
V
DS
= -40 V, V
GS
= 0 V
P-Ch
-1
T
J
= 125°C
-500
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
All
100
nA
Gate - Body Leakage, Reverse
All
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
N-Ch
1
1.9
2.5
V
T
J
= 125°C
0.8
1.5
2.2
V
DS
= V
GS
, I
D
= -250 μ.A
P-Ch
-1
-2.5
-3.5
T
J
= 125°C
-0.8
-2.2
-3
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 0.51 A
N-Ch
1
2
T
J
= 125°C
1.7
3.5
V
GS
= 4.5 V, I
D
= 0.35 A
V
GS
= -10 V, I
D
= -0.34 A
1.6
4
P-Ch
2.5
5
T
J
= 125°C
4
10
V
GS
= -4.5 V, I
D
= -0.25 A
V
GS
= 10 V, V
DS
= 10 V
V
GS
= -10 V, V
DS
= -10 V
V
DS
= 10 V, I
D
= 0.51 A
V
DS
= -10 V, I
D
= -0.34 A
5.3
7.5
I
D(on)
On-State Drain Current
N-Ch
1.5
A
P-Ch
-1
g
FS
Forward Transconductance
N-Ch
400
mS
P-Ch
250
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
20
pF
P-Ch
40
C
oss
Output Capacitance
N-Ch
13
pF
P-Ch
13
C
rss
Reverse Transfer Capacitance
N-Ch
5
pF
P-Ch
4
NDC7001C.SAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDC7002 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDC7002N | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDC7003P | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDC | ISOLATED RESISTOR NETWORK |
| NDF0610 | P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，10Ω）(P溝道增強(qiáng)型MOS場效應(yīng)管（漏電流-0.18A, 漏源電壓-60V，導(dǎo)通電阻10Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDC7001C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6 |
| NDC7001C | 制造商:Fairchild Semiconductor Corporation 功能描述:50V COMP N/P 2/5 O SSOT6 |
| NDC7001C_Q | 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDC7002 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDC7002N | 功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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