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參數(shù)資料
| 型號： | NDC651N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 245K |
| 代理商： | NDC651N |
March 1996
NDC651N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise note
Symbol Parameter
NDC651N
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage - Continuous
20
V
I
D
Drain Current - Continuous
(Note 1a)
3.2
A
- Pulsed
15
P
D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
1
(Note 1c)
0.8
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
NDC651N Rev. D1
3
5
6
4
1
2
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is tailored to minimize on-state resistance. These
devices are particularly suited for low voltage applications in
notebook computers, portable phones, PCMICA cards, and
other battery powered circuits where fast switching, and low
in-line power loss are needed in a very small outline surface
mount package.
3.2A, 30V. R
DS(ON)
= 0.09
@ V
GS
= 4.5V
R
DS(ON)
= 0.06
@ V
GS
= 10V.
Proprietary SuperSOT
TM
-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
1997 Fairchild Semiconductor Corporation
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| NDC652 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDC652P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDC7001 | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| NDC7001C | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDC651N_F095 | 功能描述:MOSFET 30V 3.2A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDC651N_Q | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDC652 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDC652P | 功能描述:MOSFET SO-6 P-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDC652P_F095 | 功能描述:MOSFET -30V 2.4A P-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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