參數(shù)資料
型號(hào)： NDC632
廠商： Fairchild Semiconductor Corporation
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： P溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管
文件頁數(shù)： 1/10頁
文件大?。?/td> 254K
代理商： NDC632
June1996
NDC632P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
Symbol Parameter
T
A
= 25°C unless otherwise noted
NDC632P
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
Gate-Source Voltage - Continuous
-8
V
I
D
Drain Current - Continuous
-2.7
A
- Pulsed
-10
P
D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
1
(Note 1c)
0.8
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
NDC632P Rev. B1
3
5
6
4
1
2
-2.7A, -20V. R
DS(ON)
= 0.14
@ V
GS
= -4.5V
R
DS(ON)
= 0.2
@ V
GS
= -2.7V.
Proprietary SuperSOT
TM
-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
These P-Channel logic level enhancement mode
power field effect transistors are produced using
Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits
where fast high-side switching, and low in-line power
loss are needed in a very small outline surface
mount package.
SuperSOT
TM
-6
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC652 P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC7001 Dual N & P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDC632P 功能描述:MOSFET P-Channel FET LL Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC632P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6
NDC632P_F095 功能描述:MOSFET -20V -2.7A P-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC651N 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC651N_F095 功能描述:MOSFET 30V 3.2A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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