參數(shù)資料
型號: NDC631N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: 4100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-6
文件頁數(shù): 9/10頁
文件大?。?/td> 246K
代理商: NDC631N
1998 Fairchild Semiconductor Corporation
SuperSOT -6 (FS PKG Code 31, 33)
SuperSOT
TM
-6 Tape and Reel Data and Package Dimensions, continued
September 1998, Rev. A
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
相關(guān)PDF資料
PDF描述
NDC632 P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC652 P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDC631N_D87Z 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC631N_F095 功能描述:MOSFET 20V 4.1A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC632 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC632P 功能描述:MOSFET P-Channel FET LL Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC632P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6