參數(shù)資料
型號： NDC631N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： 4100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁數(shù)： 2/10頁
文件大?。?/td> 246K
代理商： NDC631N
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 16 V, V
GS
= 0 V
20
V
Zero Gate Voltage Drain Current
1
μA
T
J
= 55
o
C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
0.4
0.7
1
V
T
J
= 125
o
C
0.3
0.5
0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 4.1 A
0.039
0.06
T
J
= 125
o
C
0.06
0.11
V
GS
= 2.7 V, I
D
= 3.6 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 4.5 V, I
D
= 4.1 A
0.05
0.075
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
15
A
Forward Transconductance
12
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
365
pF
Output Capacitance
230
pF
Reverse Transfer Capacitance
95
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 5 V, I
D
= 1 A,
V
GEN
= 4.5 V, R
GEN
= 6
9
17
ns
Turn - On Rise Time
25
45
ns
Turn - Off Delay Time
28
50
ns
Turn - Off Fall Time
8
15
ns
Total Gate Charge
V
= 10 V,
I
D
= 4.1 A, V
GS
= 4.5 V
10
14
nC
Gate-Source Charge
1
nC
Gate-Drain Charge
3.3
nC
NDC631N Rev.D1
相關(guān)PDF資料
PDF描述
NDC632 P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC652 P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDC631N_D87Z 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC631N_F095 功能描述:MOSFET 20V 4.1A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC632 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC632P 功能描述:MOSFET P-Channel FET LL Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC632P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6
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