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參數(shù)資料
| 型號： | NDB6020 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（35A,20V，0.023Ω）(N溝道增強型MOS場效應管（漏電流35A, 漏源電壓20V，導通電阻0.023Ω）) |
| 中文描述： | 35 A, 20 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 376K |
| 代理商： | NDB6020 |
TO-220 Tape and Reel Data and Package Dimensions
August 1999, Rev. B
0.165
TO-220 Tube Packing
Configuration:
Figure 1.0
Note/Comments
Packaging Option
TO-220 Packaging Information
Standard
(no
flow code)
Rail/Tube
Packaging type
Qty per Tube/Box
45
Box Dimension (mm)
530x130x83
Max qty per Box
1,080
Weight per unit (gm)
1.4378
S62Z
BULK
300
114x102x51
1,500
1.4378
FSCINT Label
FSCINT Label
114mm x 102mm x 51mm
EO70 Immediate Box
530mm x 130mm x 83mm
Intermediate box
300 units per
EO70 box
5 EO70 boxes per per
Intermediate Box
1500 units maximum
quantity per intermediate box
Anti-static
Bubbl e Sheets
45 units per Tube
Conduct ive Plastic Bag
1080 units maximum
quantity per box
530mm x 130mm x 83mm
Intermediate box
FSCINT Label
12 Tubes per Bag
Note: All dim ensions are in inches
F
9852
N9852
F
9852
N9852
N9852
9852
N9852
N9852
N9852
F
9852
F
9852
N9852
1.300
±
.015
0.080
0.032
±
.003
0.275
0.275
0.160
0.800
0.450
±
.030
20.000
+0.031
-0.065
0.123
+0.001
-0.003
LOT:
CBVK741B019
NSID:
FDP7060
D/C1:
D9842
SPEC REV:
B2
QA REV:
SPEC:
QTY:
1080
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
FSCINT Label sample
TO-220 Tube
Configuration:
Figure 4.0
TO-220 Packaging
Information:
Figure 2.0
TO-220 bulk Packing
Configuration:
Figure 3.0
2 bags per Box
Packaging Description:
TO-220 parts are shipped normally in tube. The tube is
made of PVC plastic treated with anti-static agent.These
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugated paper. One box contains
two bags maximum (see fig. 1.0). And one or several of
these boxes are placed inside a labeled shipping box
which comes in different sizes depending on the number
of parts shipped. The other option comes in bulk as
described in the Packaging Information table. The units in
this option are placed inside a small box laid with anti-
static bubble sheet. These smaller boxes are individually
labeled and placed inside a larger box (see fig. 3.0).
These larger or intermediate boxes then will be placed
finally inside a labeled shipping box which still comes in
different sizes depending on the number of units shipped.
相關PDF資料 |
PDF描述 |
|---|---|
| NDP6020 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDB6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（52A,30V，0.00135Ω）(N溝道邏輯電平增強型MOS場效應管（漏電流52A, 漏源電壓30V，導通電阻0.0135Ω）) |
| NDB6030PL | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-30A,-30V，0.042Ω）(P溝道邏輯增強型MOS場效應管（漏電流-30A, 漏源電壓-30V，導通電阻0.042Ω）) |
| NDB6050L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP6050L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（48A,50V，0.025Ω）(N溝道邏輯增強型MOS場效應管（漏電流48A, 漏源電壓50V，導通電阻0.025Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDB6020P | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB6020P_Q | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB603 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDB6030 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB6030L | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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