參數(shù)資料
型號： NDB6020
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Field Effect Transistor（35A,20V，0.023Ω）(N溝道增強型MOS場效應(yīng)管（漏電流35A, 漏源電壓20V，導(dǎo)通電阻0.023Ω）)
中文描述： 35 A, 20 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： D2PAK-3
文件頁數(shù)： 2/12頁
文件大小： 376K
代理商： NDB6020
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 16 V, V
GS
= 0 V
20
V
Zero Gate Voltage Drain Current
1
μA
T
J
= 55°C
10
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
0.4
0.62
1
V
T
J
= 125°C
0.2
0.35
0.7
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 18 A
0.019
0.023
T
J
= 125°C
0.024
0.032
V
GS
= 2.7 V, I
D
= 16 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 18 A
0.024
0.028
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
On-State Drain Current
60
A
Forward Transconductance
29
S
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
1170
pF
610
pF
180
pF
t
D(on)
Turn - On Delay Time
V
DD
= 20 V, I
D
= 35 A,
V
GS
= 5 V, R
GEN
= 10
R
L
= 0.5
7
20
nS
t
r
t
D(off)
Turn - On Rise Time
148
300
nS
Turn - Off Delay Time
98
200
nS
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
233
450
nS
Total Gate Charge
V
= 15 V,
I
D
= 35 A, V
GS
= 5 V
32
45
nC
Gate-Source Charge
6
nC
Gate-Drain Charge
11
nC
NDP6020 Rev.C
相關(guān)PDF資料
PDF描述
NDP6020 N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor（52A,30V，0.00135Ω）(N溝道邏輯電平增強型MOS場效應(yīng)管（漏電流52A, 漏源電壓30V，導(dǎo)通電阻0.0135Ω）)
NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor（-30A,-30V，0.042Ω）(P溝道邏輯增強型MOS場效應(yīng)管（漏電流-30A, 漏源電壓-30V，導(dǎo)通電阻0.042Ω）)
NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor（48A,50V，0.025Ω）(N溝道邏輯增強型MOS場效應(yīng)管（漏電流48A, 漏源電壓50V，導(dǎo)通電阻0.025Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDB6020P 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB6020P_Q 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB603 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB6030 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB6030L 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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