參數(shù)資料
型號(hào): NCN6001DTBEVB
廠商: ON Semiconductor
文件頁數(shù): 7/36頁
文件大小: 0K
描述: EVAL BOARD FOR NCN6001DTB
設(shè)計(jì)資源: NCN6001DTBEVB Gerber Files
NCN6001 Demo Brd Schematic
NCN6001DBEVB BOM
標(biāo)準(zhǔn)包裝: 1
主要目的: 接口,智能卡
嵌入式: 是,MCU,8 位
已用 IC / 零件: NCN6001
主要屬性: 與 ISO 7816-3,EMV,GIE-CB 兼容
次要屬性: 符合 GSM 規(guī)定
已供物品:
其它名稱: NCN6001DTBEVBOS
NCN6001
http://onsemi.com
15
At powerup, the CRD_VCC voltage rise time depends
upon the current capability of the DC/DC converter
associated with the external inductor L1 and the reservoir
capacitor connected across CRD_VCC and GROUND.
During this sequence, the average input current is 300 mA
typical (Figure 4), assuming the system is fully loaded
during the startup. Finally, the application software is
responsible for the smart card signal sequence.
On the other hand, at turn off, the CRD_VCC fall time
depends upon the external reservoir capacitor and the peak
current absorbed by the internal NMOS transistor built
across CRD_VCC and GROUND. These behaviors are
depicted in Figure 5.
Since these parameters have finite values, depending
upon the external constraints, the designer must take care of
these limits if the tON or the tOFF provided by the data sheets
does not meet his requirements.
Figure 5. CRD_VCC Typical Rise and Fall Time
Figure 6. Startup Sequence with ATR
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