參數(shù)資料
型號(hào)： NCN6001DTBEVB
廠商： ON Semiconductor
文件頁(yè)數(shù)： 18/36頁(yè)
文件大小： 0K
描述： EVAL BOARD FOR NCN6001DTB
設(shè)計(jì)資源： NCN6001DTBEVB Gerber Files
NCN6001 Demo Brd Schematic
NCN6001DBEVB BOM
標(biāo)準(zhǔn)包裝： 1
主要目的： 接口，智能卡
嵌入式： 是，MCU，8 位
已用 IC / 零件： NCN6001
主要屬性： 與 ISO 7816-3，EMV，GIE-CB 兼容
次要屬性： 符合 GSM 規(guī)定
已供物品： 板
其它名稱： NCN6001DTBEVBOS
NCN6001
http://onsemi.com
25
During the operation, the inductor is subject to high peak
current as depicted Figure 22 and the magnetic core must
sustain this level of current without damage. In particular,
the ferrite material shall not be saturated to avoid
uncontrolled current spike during the charge up cycle.
Moreover, since the DC/DC efficiency depends upon the
losses developed into the active and passive components,
selecting a low ESR inductor is preferred to reduce these
losses to a minimum.
Test Conditions: Input VCC voltage = 5.0 V
Current = 200 mA/div
Tamb = +20C
Figure 22. Typical Inductor Current
According to the ISO78163 and EMV specifications, the
interface shall limits the CRD_VCC output current to 200
mA maximum, under short circuit conditions. The
NCN6001 supports such a parameter, the limit being
depending upon the input and output voltages as depicted in
Figure 23.
On the other hand, the circuit is designed to make sure no
over current exist over the full temperature range. As a
matter of fact, the output current limit is reduced when the
temperature increases: see Figure 24.
0
20
40
60
80
100
120
140
160
180
23
4
5
6
Figure 23. Output Current Limits
Vbat
Iomax = F (Vbat)
Vo = 3.0 V
Vo = 5.0 V
Vo = 1.8 V
I out
100
110
120
130
140
150
160
25
5
15
35
557595
115
TEMPERATURE (C)
I out
(mA)
Vo = 3.0 V
Vo = 5.0 V
Vo = 1.8 V
Figure 24. Output Current Limit as a Function of
the Temperature
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