參數(shù)資料
型號(hào)： MX28F2100BTC-70
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
中文描述： 128K X 16 FLASH 12V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP1-48
文件頁(yè)數(shù)： 15/45頁(yè)
文件大?。?/td> 283K
代理商： MX28F2100BTC-70
15
MX28F2100B
P/N: PM0382
REV. 1.5, MAR. 24, 1998
DC CHARACTERISTICS
TA = 0
o
C to 70
o
C, VCC = 5V
±
10%, VPP = 12V
±
7%
SYMBOL
PARAMETER
MIN.
TYP
MAX.
UNIT
CONDITIONS
ILI
Input Leakage Current
1
uA
VIN=GND to VCC
ILO
Output Leakage Current
10
uA
VOUT=GND to VCC
ISB1
Standby VCC current
1
mA
CE=VIH
ISB2
1
100
uA
CE=VCC
±
0.3V
ICC1 (Read)
Operating VCC Current
50
mA
IOUT=0mA, f=1MHz
ICC2
70
mA
IOUT=0mA, F=10MHz
ICC3 (Program)
50
mA
In Programming
ICC4 (Erase)
50
mA
In Erase
ICCES
VCC Erase Suspend Current
10
mA
CE=VIH, Erase Suspended
IPP1 (Read)
VPP Current
200
uA
VPP=12.8V
IPP2 (Program)
50
mA
In Programming
IPP3 (Erase)
50
mA
In Erase
VIL
Input Voltage
-0.3 (Note 5)
0.8
V
VIH
2.0
VCC+0.3V
V
(Note 6)
VOL
Output Voltage
0.45
V
IOL=2.1mA
VOH
2.4
V
IOH=-400uA
VPPLK
VPP Lockout Voltage
0.0
6
V
VPPH
VPP for Program/Erase Operation 11.16
12.84
V
12V
±
7%
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
NOTES:
1. VCC must be applied before VPP and remove after VPP.
2. VPP must not exceed 14V including overshoot.
3. An influence may be had upon device reliability if the device
is installed or removed while VPP=12V.
4. Do not alter VPP either VIL to 12V or 12V to VIL when
CE=VIL.
5. VIL min. = -0.6V for pulse width < 20ns.
6. If VIH is over the specified maximum value, programming
operation cannot be guranteed.
7. ICCES is specified with the device de-selected. If the device
is read during erase suspend mode, current draw is the sum
of ICCES and ICC1 or ICC2.
8. All current are in RMS unless otherwisw noted.
相關(guān)PDF資料
PDF描述
MX28F2100BMC-12 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BMC-70 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BMC-90 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BTC-90 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F4100 4M-BIT (512K X 8) CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX28F2100BTC-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F4000MC-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
MX28F4000MC-15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
MX28F4000MC-20 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
MX28F4000PC-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*