參數(shù)資料
型號： MX28F2100BMC-12
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
中文描述： 128K X 16 FLASH 12V PROM, 120 ns, PDSO44
封裝： 0.500 INCH, PLASTIC, SOP-44
文件頁數(shù)： 1/45頁
文件大小： 283K
代理商： MX28F2100BMC-12
GENERAL DESCRIPTION
The MX28F2100B is a 2-mega bit Flash memory or-
ganized as 256K bytes of 8 bits or 128K words of 16
bits switchable. MXIC's Flash memories offer the
most cost-effective and reliable read/write non-
volatile random access memory. The MX28F2100B
is packaged in 44-pin SOP and 48-pin TSOP
(I
). It is
designed to be reprogrammed and erased in-system
or in-standard EPROM programmers.
The standard MX28F2100B offers access times as
fast as 70ns, allowing operation of high-speed
microprocessors without wait states. To eliminate
bus contention, the MX28F2100B has separate chip
enable (CE) and output enable (OE ) controls.
MXIC's Flash memories augment EPROM function-
ality with in-circuit electrical erasure and
programming. The MX28F2100B uses a command
register to manage this functionality. The command
register allows for 100% TTL level control inputs and
fixed power supply levels during erase and
programming, while maintaining maximum EPROM
compatibility.
MXIC Flash technology reliably stores memory con-
tents even after 10,000 erase and program cycles.
The MXIC cell is designed to optimize the erase and
programming mechanisms. In addition, the combi-
nation of advanced tunnel oxide processing and low
internal electric fields for erase and programming
operations produces reliable cycling. The
MX28F2100B uses a 12.0V
±
7% VPP supply to
FEATURES
262,144x8/131,072x16 switchable
Fast access time: 70/90/120ns
Low power consumption
– 50mA maximum active current
– 100uA maximum standby current
Programming and erasing voltage 12V
±
7%
Command register architecture
– Byte/Word Programming (50 us typical)
– Auto chip erase 5 sec typical
(including preprogramming time)
– Block Erase (Any one from 5 blocks:16K-Byte x1,
8K-Byte x2, 96K-Byte x1, and 128K-Byte x1)
– Auto Erase with Erase Suspend capability
1
Status Register feature for Device status detection
Auto Erase (chip & block) and Auto Program
– Status Registers
10,000 minimum erase/program cycles
Latch-up protected to 100mA from -1 to VCC+1V
Package type:
– 44-pin SOP
– 48-pin TSOP (Type 1)
perform the High Reliability Erase and auto Program/
Erase algorithms.
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to 100
milliamps on address and data pin from -1V to VCC
+ 1V.
P/N: PM0382
REV. 1.5, MAR. 24, 1998
BLOCK STRUCTURE
1 F F F F H
1 6 K - B Y T E B L O C K
A 1 6 ~ A 0
8 K - B Y T E B L O C K
8 K - B Y T E B L O C K
9 6 K - B Y T E B L O C K
1 0 0 0 0 H
0 F F F F H
0 4 0 0 0 H
0 3 F F F H
0 3 0 0 0 H
0 2 F F F H
0 2 0 0 0 H
0 1 F F F H
1 2 8 K - B Y T E B L O C K
0 0 0 0 0 H
Word Mode (x16) Memory Map
*Byte Mode operation should include
A-1(LSB) for addressing
PRELIMINARY
MX28F2100B
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
相關PDF資料
PDF描述
MX28F2100BMC-70 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
MX28F2100BMC-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BMC-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BTC-12 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BTC-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BTC-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
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