參數(shù)資料
型號: MT58L128L36D1
廠商: Micron Technology, Inc.
英文描述: 128K x 36,3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
中文描述: 128K的x 36,3.3六/輸出流水線,雙氰胺SyncBurst的SRAM(4MB,在3.3V的輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
文件頁數(shù): 7/24頁
文件大?。?/td> 425K
代理商: MT58L128L36D1
7
4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
MT58L256L18D1_2.p65 – Rev 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
PRELIMINARY
TQFP PIN DESCRIPTIONS (continued)
x18
84
x32/x36
84
SYMBOL
ADSP#
TYPE
Input
DESCRIPTION
Synchronous Address Status Processor: This active LOW input
interrupts any ongoing burst, causing a new external address to be
registered. A READ is performed using the new address,
independent of the byte write enables and ADSC#, but dependent
upon CE#, CE2 and CE2#. ADSP# is ignored if CE# is HIGH. Power-
down state is entered if CE2 is LOW or CE2# is HIGH.
Synchronous Address Status Controller: This active LOW input
interrupts any ongoing burst, causing a new external address to be
registered. A READ or WRITE is performed using the new address if
CE# is LOW. ADSC# is also used to place the chip into power-down
state when CE# is HIGH.
Mode: This input selects the burst sequence. A LOW on this pin
selects “l(fā)inear burst.” NC or HIGH on this pin selects “interleaved
burst.” Do not alter input state while device is operating.
Input/ SRAM Data I/Os: For the x18 version, Byte “a” is DQa pins; Byte “b”
Output is DQb pins. For the x32 and x36 versions, Byte “a” is DQa pins;
Byte “b” is DQb pins; Byte “c” is DQc pins; Byte “d” is DQd pins.
Input data must meet setup and hold times around the rising edge
of CLK.
85
85
ADSC#
Input
31
31
MODE
Input
(a)
58, 59,
62, 63, 68, 69, 56-59, 62, 63
72, 73
(b)
8, 9, 12,
13, 18, 19, 22, 72-75, 78, 79
23
(a)
52, 53,
DQa
(b)
68, 69
DQb
(c)
2, 3, 6-9,
12, 13
(d)
18, 19,
22-25, 28, 29
51
80
1
30
DQc
DQd
74
24
NC/
DQPa
NC/
DQPb
NC/
DQPc
NC/
DQPd
V
DD
NC/
I/O
No Connect/Parity Data I/Os: On the x32 version, these pins are No
Connect (NC). On the x18 version, Byte “a” parity is DQPa; Byte “b”
parity is DQPb. On the x36 version, Byte “a” parity is DQPa; Byte
“b” parity is DQPb; Byte “c” parity is DQPc; Byte “d” parity is DQPd.
Supply Power Supply:
See DC Electrical Characteristics and Operating
Conditions for range.
Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and
Operating Conditions for range.
Supply Ground:
GND.
14, 15, 41, 65, 14, 15, 41, 65,
91
4, 11, 20, 27,
54, 61, 70, 77 54, 61, 70, 77
5, 10, 17, 21,
26, 40, 55, 60, 26, 40, 55, 60,
67, 71, 76, 90 67, 71, 76, 90
38, 39
91
4, 11, 20, 27,
V
DD
Q
5, 10, 17, 21,
V
SS
38, 39
DNU
Do Not Use: These signals may either be unconnected or wired to
GND to improve package heat dissipation.
No Connect: These signals are not internally connected and may be
connected to ground to improve package heat dissipation.
1-3, 6, 7,
16, 25, 28-30,
51-53, 56, 57,
66, 75, 78, 79,
95, 96
42, 43
16, 66
NC
42, 43
NF
No Function: These pins are internally connected to the die and will
have the capacitance of input pins. It is allowable to leave these
pins unconnected or driven by signals.
Reserved for address
expansion, pin 43 becomes an SA at 8Mb density and pin 42
becomes an SA at 16Mb density.
相關(guān)PDF資料
PDF描述
MT58L128L32P1 128K x 32,Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
MT58L128L36P1 128K x 36,Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
MT58L128V32P1 128K x 32, Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
MT58L256L18P1 256K x 18,Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
MT58L256V18P1 256K x 18,Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
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