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參數(shù)資料
| 型號： | MT58L128L36D1 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 128K x 36，3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| 中文描述： | 128K的x 36,3.3六/輸出流水線，雙氰胺SyncBurst的SRAM（4MB，在3.3V的輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲器） |
| 文件頁數(shù)： | 11/24頁 |
| 文件大?。?/td> | 425K |
| 代理商： | MT58L128L36D1 |
11
4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
MT58L256L18D1_2.p65 – Rev 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
PRELIMINARY
FBGA PIN DESCRIPTIONS (continued)
x18
x32/x36
SYMBOL
V
SS
TYPE
Supply Ground:
GND.
DESCRIPTION
2H, 4C, 4N, 5C, 2H, 4C, 4N, 5C,
5D, 5E 5F,
5G, 5H, 5J,
5K, 5L, 5M,
6C,
6D,
6E,
6F,
6G, 6H, 6J,
6K, 6L, 6M,
7C, 7D, 7E,
7F, 7G, 7H,
7J, 7K, 7L,
7M, 7N, 8C, 8N 7M, 7N, 8C, 8N
5P, 5R, 7P, 7R 5P, 5R, 7P, 7R
5D, 5E 5F,
5G, 5H, 5J,
5K, 5L, 5M,
6C,
6D,
6E,
6F,
6G, 6H, 6J,
6K, 6L, 6M,
7C, 7D, 7E,
7F, 7G, 7H,
7J, 7K, 7L,
DNU
–
Do Not Use: These signals may either be unconnected or wired to
GND to improve package heat dissipation.
No Connect: These signals are not internally connected and
may be connected to ground to improve package heat
dissipation. Pins 11P, and 6N reserved for address pin
expansion; 8Mb, and 16Mb respectively.
1A, 1B, 1C,
1D, 1E, 1F,
1G, 1P, 2C,
2J, 2K,
2L, 2M, 2N,
2P, 2R, 3H,
4B, 5A, 5N,
6N, 9H, 10C,
10D, 10E, 10F,
10G, 10H,
10N, 11B,
11J, 11K,
11L, 11M,
11N, 11P
1A, 1B, 1P,
2C, 2N,
2P, 2R, 3H,
5N, 6N,
9H, 10C,
10H, 10N,
11A, 11B,
11P
NC
–
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L128L32P1 | 128K x 32，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128L36P1 | 128K x 36，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128V32P1 | 128K x 32， Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L256L18P1 | 256K x 18,Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L256V18P1 | 256K x 18，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L128L36D1T-10 | 制造商:Cypress Semiconductor 功能描述:128KX36 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L128L36F1 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128L36F1T-10 | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Quad 3.3V 4M-Bit 128K x 36 10ns 100-Pin TQFP 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L128L36F1T-10 TR | 制造商:Cypress Semiconductor 功能描述:128KX36 SRAM PLASTIC TQFP 3.3V |
| MT58L128L36F1T-8.5 | 制造商:Cypress Semiconductor 功能描述:128KX36 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
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