參數(shù)資料
型號(hào): MT58L128L36D1
廠商: Micron Technology, Inc.
英文描述: 128K x 36,3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)存儲(chǔ)器)
中文描述: 128K的x 36,3.3六/輸出流水線,雙氰胺SyncBurst的SRAM(4MB,在3.3V的輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)存儲(chǔ)器)
文件頁(yè)數(shù): 2/24頁(yè)
文件大?。?/td> 425K
代理商: MT58L128L36D1
2
4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
MT58L256L18D1_2.p65 – Rev 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
PRELIMINARY
FUNCTIONAL BLOCK DIAGRAM
256K x 18
SA0, SA1, SA
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER AND
LOGIC
CLR
Q1
Q0
ADSC#
18
18
16
18
BWb#
BWa#
BWE#
CE#
CE2
CE2#
18
BYTE “b”
WRITE REGISTER
BYTE “a”
WRITE REGISTER
ENABLE
REGISTER
18
SA0'
SA1'
OE#
AMPS
MEMORY
ARRAY
ADSP#
9
9
2
SA0-SA1
MODE
GW#
PIPELINED
ENABLE
DQs
DQPa
DQPb
2
18
OUTPUT
REGISTERS
INPUT
REGISTERS
18
E
18
BYTE “b”
WRITE DRIVER
BYTE “a”
WRITE DRIVER
OUTPUT
BUFFERS
9
9
NOTE:
Functional block diagrams illustrate simplified device operation. See truth tables, pin descriptions, and timing diagrams
for detailed information.
FUNCTIONAL BLOCK DIAGRAM
128K x 32/36
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER
CLR
Q1
Q0
ADSP#
ADSC#
MODE
17
17
17
BWd#
BWc#
BWb#
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “d”
WRITE REGISTER
BYTE “c”
WRITE REGISTER
BYTE “b”
WRITE REGISTER
BYTE “a”
WRITE REGISTER
ENABLE
REGISTER
PIPELINED
ENABLE
4
OUTPUT
REGISTERS
SENSE
12(x32)
12(x36)
ARRAY
OUTPUT
BUFFERS
E
BYTE “a”
WRITE DRIVER
BYTE “b”
WRITE DRIVER
BYTE “c”
WRITE DRIVER
BYTE “d”
WRITE DRIVER
INPUT
REGISTERS
SA0, SA1, SA
SA0'
SA1'
SA0-SA1
DQs
DQPa
DQPd
9
36
36
36
36
36
9
9
9
9
9
9
9
相關(guān)PDF資料
PDF描述
MT58L128L32P1 128K x 32,Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲(chǔ)器)
MT58L128L36P1 128K x 36,Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲(chǔ)器)
MT58L128V32P1 128K x 32, Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲(chǔ)器)
MT58L256L18P1 256K x 18,Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲(chǔ)器)
MT58L256V18P1 256K x 18,Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲(chǔ)器)
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