參數(shù)資料
型號(hào)： MT46H256M32L2JV-75IT:A
元件分類： DRAM
英文描述： 256M X 32 DDR DRAM, 6 ns, PBGA168
封裝： 12 X 12 MM, GREEN, PLASTIC, VFBGA-168
文件頁(yè)數(shù)： 100/106頁(yè)
文件大?。?/td> 3431K
Concurrent Auto Precharge
This device supports concurrent auto precharge such that when a READ with auto pre-
charge is enabled or a WRITE with auto precharge is enabled, any command to another
bank is supported, as long as that command does not interrupt the read or write data
transfer already in process. This feature enables the precharge to complete in the bank
in which the READ or WRITE with auto precharge was executed, without requiring an
explicit PRECHARGE command, thus freeing the command bus for operations in other
banks.
2Gb: x16, x32 Mobile LPDDR SDRAM
Auto Precharge
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
93
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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