參數資料
型號： MRF6P3300HR5
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)
中文描述： 射頻功率場效應晶體管（N溝道增強型MOSFET的側）
文件頁數： 1/24頁
文件大?。?/td> 879K
代理商： MRF6P3300HR5
MRF6P3300HR3 MRF6P3300HR5
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of this device make it ideal for large-signal, common-source amplifier
applications in 32 volt analog or digital television transmitter equipment.
Typical Narrowband Two-Tone Performance @ 860 MHz: V
DD
= 32 Volts,
I
DQ
= 1600 mA, P
out
= 270 Watts PEP
Power Gain — 20.2 dB
Drain Efficiency — 44.1%
IMD — -30.8 dBc
Typical Narrowband DVBT OFDM Performance @ 860 MHz: V
DD
=
32 Volts, I
DQ
= 1600 mA, P
out
= 60 Watts Avg., 8K Mode, 64 QAM
Power Gain — 20.4 dB
Drain Efficiency — 29%
ACPR @ 3.9 MHz Offset — -57 dBc @ 20 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Designed for Push-Pull Operation Only
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
761
4.3
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 300 W CW
Case Temperature 82
°
C, 220 W CW
Case Temperature 79
°
C, 100 W CW
Case Temperature 81
°
C, 60 W CW
R
θ
JC
0.23
0.24
0.27
0.27
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF6P3300H
Rev. 0, 9/2005
Freescale Semiconductor
Technical Data
MRF6P3300HR3
MRF6P3300HR5
470-860 MHz, 300 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI-860C3
Freescale Semiconductor, Inc., 2005. All rights reserved.
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