- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄45329 > MK20X512VMD100R (FREESCALE SEMICONDUCTOR INC) RISC MICROCONTROLLER, PBGA144 PDF資料下載
參數(shù)資料
| 型號： | MK20X512VMD100R |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | RISC MICROCONTROLLER, PBGA144 |
| 封裝： | 13 X 13 MM, MAPBGA-144 |
| 文件頁數(shù)： | 26/67頁 |
| 文件大?。?/td> | 997K |
| 代理商： | MK20X512VMD100R |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁當(dāng)前第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁
Table 20. NVM reliability characteristics (continued)
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
tnvmretee10 Data retention up to 10% of write endurance
10
TBD
—
years
tnvmretee1 Data retention up to 1% of write endurance
15
TBD
—
years
nnvmwree16 Write endurance with an EEPROM backup to
FlexRAM ratio of 16
35 K
TBD
—
writes
nnvmwree128 Write endurance with an EEPROM backup to
FlexRAM ratio of 128
315 K
TBD
—
writes
nnvmwree512 Write endurance with an EEPROM backup to
FlexRAM ratio of 512
1.27 M
TBD
—
writes
nnvmwree4k Write endurance with an EEPROM backup to
FlexRAM ratio of 4096
10 M
TBD
—
writes
nnvmwree32k Write endurance with an EEPROM backup to
FlexRAM ratio of 32,768
80 M
TBD
—
writes
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
2. Data retention is based on Tjavg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C
4. Write endurance represents the number of writes to FlexRAM at -40°C ≤Tj ≤ 125°C influenced by the cycling endurance of
the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum value assumes all
byte-writes to FlexRAM.
6.4.1.5 Write Endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size are used throughout
the entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
× Write_efficiency × n
EEPROM – 2 × EEESPLIT × EEESIZE
EEESPLIT × EEESIZE
nvmcycd
where
Writes_subsystem — minimum writes to FlexRAM for subsystem (each subsystem
can have different endurance)
Peripheral operating requirements and behaviors
K20 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
32
Preliminary
Freescale Semiconductor, Inc.
Preliminary
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MK20X512VLQ100R | RISC MICROCONTROLLER, PQFP144 |
| MK2304S-1ILF | 2304 SERIES, PLL BASED CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8 |
| MK2304S-1LF | 2304 SERIES, PLL BASED CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8 |
| MK2703SILF | 27 MHz, OTHER CLOCK GENERATOR, PDSO8 |
| MK2703SLFTR | 27 MHz, OTHER CLOCK GENERATOR, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MK2104MAV | 制造商:Panasonic Industrial Company 功能描述:DISK DRIVE |
| MK21-1A66B-100W | 制造商:MEDER 制造商全稱:Meder Electronic 功能描述:MK Reed Sensor |
| MK21-1A66B-500W | 功能描述:近程傳感器 1 Form A Screw Mt AT 1015 Wire Term RoHS:否 制造商:Vishay Semiconductors 感應(yīng)方式:Optical 感應(yīng)距離:1 mm to 200 mm 電源電壓:2.5 V to 3.6 V 安裝風(fēng)格:SMD/SMT 輸出配置:Digital 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 系列:VCNL3020 |
| MK21-1A66C-100W | 制造商:MEDER 制造商全稱:Meder Electronic 功能描述:MK Reed Sensor |
| MK21-1A66C-500W | 功能描述:近程傳感器 1 Form A Screw Mt AT 1520 Wire Term RoHS:否 制造商:Vishay Semiconductors 感應(yīng)方式:Optical 感應(yīng)距離:1 mm to 200 mm 電源電壓:2.5 V to 3.6 V 安裝風(fēng)格:SMD/SMT 輸出配置:Digital 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 系列:VCNL3020 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。