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參數資料
| 型號： | MIXA20WB1200TED |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 28 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | E2-PACK-24 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 273K |
| 代理商： | MIXA20WB1200TED |
2010 IXYS All rights reserved
1 - 8
20100629d
MIXA20WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Converter - Brake - Inverter
Module
XPT IGBT
Single Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
V
RRM
= 1600 V V
CES = 1200 V
V
CES = 1200 V
I
DAVM25 =
150 A I
C25
= 17 A I
C25
= 28 A
I
FSM
= 320 A V
CE(sat) = 1.8 V VCE(sat) = 1.8 V
Pin configuration see outlines.
Features:
Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 sec.
- very low gate charge
- low EMI
Thin wafer technology combined with
the XPT design results in a competitive
low V
CE(sat)
SONIC diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and
resonant-mode power supplies
Package:
"E2-Pack" standard outline
Insulated copper base plate
Soldering pins for PCB mounting
Temperature sense included
Part name (Marking on product)
MIXA20WB1200TED
E 72873
21
22
1
D12
2
D13
D7
T7
D1
D3
D5
D2
D4
D6
T1
T3
T5
T2
T4
T6
D15
D11
D14
D16
3
23
24
14
7
16
15
11
10
18
17
12
6
20
19
13
5
4
NTC
8
9
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MIXA20WB1200TMH | 功能描述:IGBT 模塊 1200V XPT CBI XPT IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MIXA20WB1200TML | 功能描述:IGBT 模塊 Converter-Brake Inverter Module RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MIXA225PF1200TSF | 功能描述:IGBT 模塊 XPT IGBT Module RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MIXA225RF1200TSF | 功能描述:IGBT 模塊 XPT IGBT Module RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MIXA300PF1200TSF | 功能描述:IGBT 模塊 XPT IGBT Module RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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