參數(shù)資料
型號(hào): MHV5IC2215NR2_07
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF LDMOS Wideband Integrated Power Amplifier
中文描述: 射頻LDMOS寬帶集成功率放大器
文件頁數(shù): 5/19頁
文件大小: 841K
代理商: MHV5IC2215NR2_07
MHV5IC2215NR2
5
RF Device Data
Freescale Semiconductor
TYPICAL W-CDMA DRIVER APPLICATION CHARACTERISTICS
PAE
I
0
66
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 5. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
33
0
27
12
21
24
15
36
3
60
0.1
1
10
PAE
G
ps
ACPR
IM3
48
9
P
,
p
,
30
24
18
12
6
6
18
30
42
54
V
DD
= 28 Vdc, I
DQ1
= 164 mA, I
DQ2
= 115 mA
f1 = 2135 MHz, f2 = 2145 MHz, 2 x WCDMA
10 MHz in 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
30
18
28
0.1
0
50
V
DD
= 28 Vdc
I
DQ1
= 164 mA
I
DQ2
= 115 mA
f = 2140 MHz
T
C
= 30 C
30 C
25 C
85 C
10
1
26
24
22
20
40
30
20
10
P
out
, OUTPUT POWER (WATTS) CW
Figure 6. Power Gain and Power Added
Efficiency versus Output Power
G
p
,
P
G
ps
25 C
85 C
P
out
, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain versus Output Power
I
DQ1
= 164 mA
I
DQ2
= 115 mA
f = 2140 MHz
V
DD
= 24 V
32 V
10
19
26
0
8
25
24
23
20
22
21
2
4
6
G
p
,
12
14
28 V
3000
21
28
1000
16
2
S21
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
S11
21
4
14
6
7
8
0
10
7
12
14
14
2500
2000
1500
V
DD
= 28 Vdc, P
out
= 23 dBm CW
I
DQ1
= 164 mA, I
DQ2
= 115 mA
S
S
2300
18
30
1900
T
C
= 30 C
25 C
85 C
26
24
22
20
1950
2050
2150
f, FREQUENCY (MHz)
Figure 9. Power Gain versus Frequency
G
p
,
28
2000
2100
2200
2250
V
DD
= 28 Vdc, P
out
= 23 dBm CW
I
DQ1
= 164 mA, I
DQ2
= 115 mA
TwoTone Measurements, Center Frequency = 2140 MHz
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