- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359165 > MHVIC2115NR2 (飛思卡爾半導(dǎo)體(中國)有限公司) RF LDMOS Wideband Integrated Power Amplifier PDF資料下載
參數(shù)資料
| 型號(hào)： | MHVIC2115NR2 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifier |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 425K |
| 代理商： | MHVIC2115NR2 |
MHVIC2115NR2
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifier
The MHVIC2115NR2 wideband integrated circuit is designed for base station
applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS
IC technology and integrates a multi-stage structure. Its wideband On-Chip
matching design makes it usable from 1600 to 2600 MHz. The linearity
performances cover W-CDMA modulation formats.
Final Application
Typical W-CDMA Performance: -45 dBc ACPR, 2110-2170 MHz, V
DD
=
27 Volts, I
DQ1
= 56 mA, I
DQ2
= 61 mA, I
DQ3
= 117 mA, P
out
= 34 dBm,
3GPP Test Model 1, Measured in 1.0 MHz BW @ 4 MHz offset, 64 DTCH
Power Gain — 30 dB
PAE = 16%
Driver Application
Typical W-CDMA Performance: -53 dBc ACPR, 2110-2170 MHz, V
DD
=
26 Volts, I
DQ1
= 96 mA, I
DQ2
= 204 mA, I
DQ3
= 111 mA, P
out
= 23 dBm,
3GPP Test Model 1, Measured in 3.84 MHz BW @ 5 MHz offset, 64 DTCH
Power Gain — 34 dB
Gain Flatness = 0.3 dB from 2110-2170 MHz
P1dB = 15 Watts, Gain Flatness = 0.2 dB from 2110-2170 MHz
Capable of Handling 3:1 VSWR, @ 26 Vdc, 2140 MHz, 15
Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip Matching (50
Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
16
15
14
13
12
11
10
1
2
3
4
5
6
7
8
(Top View)
9
N.C.
V
GS3
V
GS2
V
GS1
RF
in
RF
in
V
DS1
V
DS2
N.C.
V
DS3
/RF
out
V
DS3
/RF
out
V
DS3
/RF
out
V
DS3
/RF
out
V
DS3
/RF
out
V
DS3
/RF
out
N.C.
Quiescent Current
Temperature Compensation
3 Stages I
C
V
DS1
V
DS2
RF
in
I
C
V
GS3
V
GS2
V
GS1
V
DS3
/RF
out
Note: Exposed backside flag is source
terminal for transistors.
Figure 1.
Block Diagram
Figure 2. Pin Connections
Document Number: MHVIC2115NR2
Rev. 5, 5/2006
Freescale Semiconductor
Technical Data
MHVIC2115NR2
CASE 978-03
PFP-16
2170 MHz, 26 V, 23/34 dBm
W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
Freescale Semiconductor, Inc., 2006. All rights reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MHVIC910HNR2 | 921 MHz-960 MHz SiFET RF Integrated Power Amplifier |
| MHVIC915NR2 | RF LDMOS Wideband Integrated Power Amplifier |
| MHW10186N | Gallium Arsenide CATV Amplifier Module |
| MHW10188AN | Gallium Arsenide CATV Amplifier Module |
| MHW10236N | Gallium Arsenide CATV Amplifier Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MHVIC2115R2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifier |
| MHVIC2115R5 | 功能描述:IC PWR AMP RF LDMOS 16-PFP RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MHVIC910HNR2 | 功能描述:射頻放大器 IC 10W IPA PFP-16N RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MHVIC910HR2 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:921 MHz − 960 MHz SiFET RF Integrated Power Amplifier |
| MHVIC915 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:746-960 MHz RF LDMOS Wideband Integrated Power Amplifier |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。