參數(shù)資料
型號: MHV5IC2215NR2_07
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF LDMOS Wideband Integrated Power Amplifier
中文描述: 射頻LDMOS寬帶集成功率放大器
文件頁數(shù): 10/19頁
文件大?。?/td> 841K
代理商: MHV5IC2215NR2_07
10
RF Device Data
Freescale Semiconductor
MHV5IC2215NR2
TYPICAL N-CDMA DRIVER APPLICATION CHARACTERISTICS
PAE
I
0
66
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 14. 2-Carrier N-CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
44
0
36
12
28
24
20
36
4
60
0.1
1
10
PAE
G
ps
ACPR
IM3
48
12
P
,
p
,
40
32
24
16
8
6
18
30
42
54
30
26
31
0.1
0
50
V
DD
= 28 Vdc
I
DQ1
= 145 mA
I
DQ2
= 105 mA
f = 1960 MHz
10
1
30
29
28
27
40
30
20
10
P
out
, OUTPUT POWER (WATTS) CW
Figure 15. Power Gain and Power Added
Efficiency versus Output Power
G
p
,
P
G
ps
3000
24
32
1000
16
2
S21
f, FREQUENCY (MHz)
Figure 16. Broadband Frequency Response
S11
24
4
16
6
8
8
0
10
8
12
16
14
2500
2000
1500
V
DD
= 28 Vdc
P
out
= 23 dBm CW
I
DQ1
= 145 mA
I
DQ2
= 105 mA
S
S
V
DD
= 28 Vdc, I
DQ1
= 145 mA, I
DQ2
= 105 mA, f1 = 1955 MHz
f2 = 1965 MHz, 2 x NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @
0.01% Probability (CCDF)
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