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參數(shù)資料
| 型號(hào)： | MHV5IC2215NR2_07 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifier |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 1/19頁 |
| 文件大小： | 841K |
| 代理商： | MHV5IC2215NR2_07 |
MHV5IC2215NR2
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifier
The MHV5IC2215NR2 wideband integrated circuit is designed for base
station applications. It uses Freescale’s High Voltage (28 Volts) LDMOS IC
technology and integrates a two-stage structure. Its wideband on-chip
matching design makes it usable from 1500 to 2200 MHz. The linearity
performances cover all modulation formats for cellular applications including
TD-SCDMA.
Driver Application
Typical Single-Carrier N-CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
164 mA, I
DQ2
= 115 mA, P
out
= 23 dBm, Full Frequency Band (1930-
1990 MHz), IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through
13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.5
dB
ACPR @ 885 kHz Offset — -60 dBc in 30 kHz Bandwidth
Typical Single-Carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
164 mA, I
DQ2
= 115 mA, P
out
= 23 dBm, Full Frequency Band (2130-
2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 24 dB
ACPR @ 5 MHz Offset — -55 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 15 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
Features
On-Chip Matching (50
Ohm Input, >5 Ohm Output)
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
On-Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Document Number: MHV5IC2215N
Rev. 3, 1/2007
Freescale Semiconductor
Technical Data
MHV5IC2215NR2
CASE 978-03
PFP-16
2170 MHz, 23 dBm, 28 V
SINGLE N-CDMA, SINGLE W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
Note: Exposed backside flag is source
terminal for transistors.
16
15
14
13
12
11
10
1
2
3
4
5
6
7
8
(Top View)
9
N.C.
V
RD1
V
RG1
V
DS1
GND
V
GS1
V
GS2
N.C.
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
N.C.
RF
in
V
GS1
RF
in
V
DS1
V
GS2
V
DS2
/RF
out
2 Stage IC
Quiescent Current
Temperature Compensation
V
RD1
V
RG1
Figure 1. Block Diagram
Figure 2. Pin Connections
Freescale Semiconductor, Inc., 2007. All rights reserved.
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