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參數(shù)資料
| 型號： | MHV5IC2215NR2_07 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifier |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 18/19頁 |
| 文件大?。?/td> | 841K |
| 代理商： | MHV5IC2215NR2_07 |
18
RF Device Data
Freescale Semiconductor
MHV5IC2215NR2
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1949: Mounting Method for the MHVIC910HR2 (PFP-16) and Similar Surface Mount Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
3
Jan. 2007
Added “including TD-SCDMA” to data sheet description paragraph, p. 1
Updated verbiage in Typical N-CDMA Tests table, p. 2
Corrected ordering of Z11 and Z13 numbers in Z list, Fig. 3, Test Circuit Schematic and updated Part
Numbers in Table 6, Component Designations and Values (for W-CDMA), to RoHS compliant part
numbers, p. 3
Adjusted scale for Fig. 6, Power Gain and Power Added Efficiency versus Output Power, to better match
the device’s capabilities, p. 5
Removed lower voltage tests from Fig. 7, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 5
Replaced Fig. 10, MTTF versus Junction Temperature with updated graph. Removed Amps
2
and listed
operating characteristics and location of MTTF calculator for device, p. 6
Corrected ordering of Z10 and Z11 numbers in Z list, Fig. 12, Test Circuit Schematic and updated Part
Numbers in Table 7, Component Designations and Values (for N-CDMA), to RoHS compliant part
numbers, p. 8
Adjusted scale for Fig. 15, Power Gain and Power Added Efficiency versus Output Power, to better match
the device’s capabilities, p. 10
Updated Z
in
values and chart in Fig. 11, W-CDMA Series Impedance, p. 7, and in
Fig. 17, N-CDMA Series Impedance, p. 11
Added TD-SCDMA test circuit schematic, component designations and values, component layout, typical
characteristic curves, test signal and series impedance, p. 13-16
Added Product Documentation and Revision History, p. 18
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MHV5IC2215NR2 | RF LDMOS Wideband Integrated Power Amplifier |
| MHVIC2114NR2 | RF LDMOS Wideband Integrated Power Amplifier |
| MHVIC2115NR2 | RF LDMOS Wideband Integrated Power Amplifier |
| MHVIC910HNR2 | 921 MHz-960 MHz SiFET RF Integrated Power Amplifier |
| MHVIC915NR2 | RF LDMOS Wideband Integrated Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MHVIC2114NR2 | 功能描述:射頻放大器 2.2GHZ IPA PFP-16N RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MHVIC2114R2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifier |
| MHVIC2115NR2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifier |
| MHVIC2115R2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifier |
| MHVIC2115R5 | 功能描述:IC PWR AMP RF LDMOS 16-PFP RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
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