參數(shù)資料
型號(hào)： MCIMX357DVM5BR2
廠商： Freescale Semiconductor
文件頁數(shù)： 59/147頁
文件大?。?/td> 0K
描述： IC MPU I.MX35 400MAPBGA
標(biāo)準(zhǔn)包裝： 1,000
系列： i.MX35
核心處理器： ARM11
芯體尺寸： 32-位
速度： 532MHz
連通性： 1 線，CAN，EBI/EMI，以太網(wǎng)，I²C，MMC，SPI，SSI，UART/USART，USB OTG
外圍設(shè)備： DMA，I²S，LCD，POR，PWM，WDT
輸入/輸出數(shù)： 96
程序存儲(chǔ)器類型： ROMless
RAM 容量： 128K x 8
電壓 - 電源 (Vcc/Vdd)： 1.33 V ~ 1.47 V
振蕩器型： 外部
工作溫度： -20°C ~ 70°C
封裝/外殼： 400-LFBGA
包裝： 帶卷 (TR)
i.MX35 Applications Processors for Industrial and Consumer Products, Rev. 10
Freescale Semiconductor
19
532 MHz. Common supplies have been bundled according to the i.MX35 power-up sequence
requirements. Peak numbers are provided for system designers so that the i.MX35 power supply
requirements will be satisfied during startup and transient conditions. Freescale recommends that system
current measurements be taken with customer-specific use-cases to reflect normal operating conditions in
the end system.
The method for obtaining max current is as follows:
1. Measure worst case power consumption on individual rails using directed test on i.MX35.
2. Correlate worst case power consumption power measurements with worst case power
consumption simulations.
3. Combine common voltage rails based on power supply sequencing requirements
4. Guard band worst case numbers for temperature and process variation. Guard band is based on
process data and correlated with actual data measured on i.MX35.
5. The sum of individual rails is greater than real world power consumption, as a real system does
not typically maximize power consumption on all peripherals simultaneously.
4.6
Thermal Characteristics
The thermal resistance characteristics for the device are given in Table 12. These values were measured
under the following conditions:
Two-layer substrate
Substrate solder mask thickness: 0.025 mm
Substrate metal thicknesses: 0.016 mm
Substrate core thickness: 0.200 mm
Core via I.D: 0.168 mm, Core via plating 0.016 mm.
Full array map design, but nearly all balls under die are power or ground.
Die Attach: 0.033 mm non-conductive die attach, k = 0.3 W/m K
Mold compound: k = 0.9 W/m K
Table 11. Power Consumption
Power Supply
Voltage (V)
Max Current (mA)
QVCC
1.47
400
MVDD, PVDD
1.65
20
NVCC_EMI1, NVCC_EMI2, NVCC_EMI3, NVCC_LCDC, NVCC_NFC
1.9
90
FUSE_VDD1
1 This rail is connected to ground; it only needs a voltage if eFuses are to be programmed. FUSE_VDD should be supplied by
following the power up sequence given in Section 4.3.1, “Powering Up.”
3.6
62
NVCC_MISC, NVCC_CSI, NVCC_SDIO, NVCC_CRM, NVCC_ATA, NVCC_MLB,
NVCC_JTAG
3.6
60
OSC24M_VDD, OSC_AUDIO_VDD, PHY1_VDDA, PHY2_VDD,
USBPHY1_UPLLVDD, USBPHY1_VDDA_BIAS
3.6
25
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCIMX35GVMN4A 制造商:Freescale Semiconductor 功能描述:RINGO MX35 CONSUMER - Trays
MCIMX35LPDK 功能描述:開發(fā)板和工具包 - ARM I.MX35 PRODUCT DEVELOPME RoHS:否 制造商:Arduino 產(chǎn)品:Development Boards 工具用于評(píng)估:ATSAM3X8EA-AU 核心:ARM Cortex M3 接口類型:DAC, ICSP, JTAG, UART, USB 工作電源電壓:3.3 V
MCIMX35LPDK 制造商:Freescale Semiconductor 功能描述:I.MX35 Linux Development Kit
MCIMX35LPDKJ 功能描述:開發(fā)板和工具包 - ARM HARDWARE RoHS:否 制造商:Arduino 產(chǎn)品:Development Boards 工具用于評(píng)估:ATSAM3X8EA-AU 核心:ARM Cortex M3 接口類型:DAC, ICSP, JTAG, UART, USB 工作電源電壓:3.3 V
MCIMX35LPDKJ 制造商:Freescale Semiconductor 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE
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