參數(shù)資料
型號: MC9S12UF32PU
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 60 MHz, MICROCONTROLLER, PQFP100
封裝: LQFP-100
文件頁數(shù): 12/128頁
文件大?。?/td> 1785K
代理商: MC9S12UF32PU
109
Freescale Semiconductor
System on a Chip Guide — 9S12UF32DGV1/D V01.05
A.2 NVM, Flash
NOTE:
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
Flash.
A.2.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency fNVMOSC is required for performing program or erase operations. The NVM modules
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash program and erase operations are timed using a clock derived from the oscillator using the
FCLKDIV register. The frequency of this clock must be set within the limits specified as fNVMOP.
The minimum program and erase times shown in Table A-9 are calculated for maximum fNVMOP and
maximum fbus. The maximum times are calculated for minimum fNVMOP and a fbus of 2MHz.
A.2.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency fNVMOP and can be calculated according to the following formula.
A.2.1.2 Burst Programming
This applies only to the Flash where up to 32 words in a row can be programmed consecutively using burst
programming by keeping the command pipeline filled. The time to program a consecutive word can be
calculated as:
The time to program a whole row is:
Burst programming is more than 2 times faster than single word programming.
A.2.1.3 Sector Erase
Erasing a 512 byte Flash sector takes:
t
swpgm
9
1
f
NVMOP
---------------------
25
1
f
bus
----------
+
=
t
bwpgm
4
1
f
NVMOP
---------------------
9
1
f
bus
----------
+
=
t
brpgm
t
swpgm
31 t
bwpgm
+
=
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