FLASH
MC9S08GB/GT Data Sheet, Rev. 2.3
Freescale Semiconductor
47
It is possible to program the entire array through the single-wire background debug interface. Because no
special voltages are needed for FLASH erase and programming operations, in-application programming
is also possible through other software-controlled communication paths. For a more detailed discussion of
in-circuit and in-application programming, refer to the
HCS08 Family Reference Manual, Volume I,
Freescale Semiconductor document order number HCS08RMv1/D.
4.4.1
Features
Features of the FLASH memory include:
FLASH Size
— MC9S08GB60/MC9S08GT60 — 61268 bytes (120 pages of 512 bytes each)
— MC9S08GB32/MC9S08GT32— 32768 bytes (64 pages of 512 bytes each)
— MC9S08GT16 — 16384 bytes (32 pages of 512 bytes each)
Single power supply program and erase
Command interface for fast program and erase operation
Up to 100,000 program/erase cycles at typical voltage and temperature
Flexible block protection
Security feature for FLASH and RAM
Auto power-down for low-frequency read accesses
4.4.2
Program and Erase Times
Before any program or erase command can be accepted, the FLASH clock divider register (FCDIV) must
be written to set the internal clock for the FLASH module to a frequency (f
FCLK
) between 150 kHz and
200 kHz (see
Table 4.6.1
). This register can be written only once, so normally this write is done during
reset initialization. FCDIV cannot be written if the access error flag, FACCERR in FSTAT, is set. The user
must ensure that FACCERR is not set before writing to the FCDIV register. One period of the resulting
clock (1/f
FCLK
) is used by the command processor to time program and erase pulses. An integer number
of these timing pulses is used by the command processor to complete a program or erase command.
Table 4-5
shows program and erase times. The bus clock frequency and FCDIV determine the frequency
of FCLK (f
FCLK
). The time for one cycle of FCLK is t
FCLK
= 1/f
FCLK
. The times are shown as a number
of cycles of FCLK and as an absolute time for the case where t
FCLK
= 5
μ
s. Program and erase times
shown include overhead for the command state machine and enabling and disabling of program and erase
voltages.
Table 4-5. Program and Erase Times
Parameter
Cycles of FCLK
Time if FCLK = 200 kHz
Byte program
9
45
μ
s
20
μ
s
1
20 ms
Byte program (burst)
4
1
Excluding start/end overhead
Page erase
4000
Mass erase
20,000
100 ms