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參數(shù)資料
| 型號(hào)： | MC68HC05K3CSDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, MROM, 2 MHz, MICROCONTROLLER, PDSO20 |
| 封裝： | SSOP-20 |
| 文件頁(yè)數(shù)： | 124/132頁(yè) |
| 文件大?。?/td> | 1188K |
| 代理商： | MC68HC05K3CSDR2 |
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Personality EEPROM (PEEPROM)
Serial Programming Sequence
MC68HC05K3 — Revision 4.0
Technical Data
MOTOROLA
Personality EEPROM (PEEPROM)
91
9.7 Serial Programming Sequence
The programming of the internal personality EEPROM always begins at
bit address 00 of the 128-bit array. The signal timing on the IRQ and PB0
EEPROM is serially programmed by using this sequence:
1. Follow the serial programming mode entry routine as specified in
2. Keep the DATA signal at 0 Vdc throughout the select sequence.
3. Clock the SEL/CLK signal line to 0 Vdc and back to VSELCKH (first
select bit).
4. Clock the SEL/CLK signal line to 0 Vdc and back to VSELCKH
(second select bit).
5. Clock the SEL/CLK signal line to 0 Vdc and back to VSELCKH (third
select bit).
6. The device is now ready to receive the data to be programmed into
the 128 bits of the personality EEPROM. During the next 128
clocks of the SEL/CLK signal line, the data to be stored into each
bit (starting with location $00) must be present on the DATA signal
line prior to the falling edge of the SEL/CLK signal line to 0 Vdc.
The time that the SEL/CLK signal line stays at 0 Vdc is determined
by the EEPROM programming time (tEPGM).
7. On the 128th data bit, rather than drive the SEL/CLK signal high
to complete the programming sequence, drive the RESET pin to
0 V after a time, tEPGM. This must be done to prevent the part from
entering an unknown state. If all 128 bits do not need to be
programmed, the RESET pin may be driven to 0 V after the last bit
has been programmed. This will complete the programming
sequence.
8. While RESET is held low, the pins can be conditioned for the next
sequence.
This completes the serial programming sequence. The device can now
be verified by going to the serial data readout sequence or bulk erased
by going to the bulk erase sequence.
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