參數(shù)資料
型號： MC68B912B32
廠商： Motorola, Inc.
英文描述： 2.5V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
中文描述： 16位微控制器
文件頁數(shù)： 38/128頁
文件大小： 748K
代理商： MC68B912B32
MOTOROLA
38
MC68HC912B32
MC68HC912B32TS/D
This register controls the operation of the Flash EEPROM array. BOOTP cannot be changed when the
LOCK control bit in the FEELCK register is set or if ENPE in the FEECTL register is set.
BOOTP — Boot Protect
The boot block is located at $7800–$7FFF or $F800–$FFFF depending upon the mapped location of
the Flash EEPROM array and mask set ($7C00–$7FFF or $FC00–$FFFF for 1-Kbyte block).
0 = Enable erase and program of 1-Kbyte or 2-Kbyte boot block
1 = Disable erase and program of 1-Kbyte or 2-Kbyte boot block
In normal mode, writes to FEETST control bits have no effect and always read zero. The Flash
EEPROM module cannot be placed in test mode inadvertently during normal operation.
FSTE — Stress Test Enable
0 = Disables the gate/drain stress circuitry
1 = Enables the gate/drain stress circuitry
GADR — Gate/Drain Stress Test Select
0 = Selects the drain stress circuitry
1 = Selects the gate stress circuitry
HVT — Stress Test High Voltage Status
0 = High voltage not present during stress test
1 = High voltage present during stress test
FENLV — Enable Low Voltage
0 = Disables low voltage transistor in current reference circuit
1 = Enables low voltage transistor in current reference circuit
FDISVFP — Disable Status V
FP
Voltage Lock
When the V
FP
pin is below normal programming voltage the Flash module will not allow writing to the
LAT bit; the user cannot erase or program the Flash module. The FDISVFP control bit enables writing
to the LAT bit regardless of the voltage on the V
FP
pin.
0 = Enable the automatic lock mechanism if V
FP
is low
1 = Disable the automatic lock mechanism if V
FP
is low
VTCK — V
T
Check Test Enable
When VTCK is set, the Flash EEPROM module uses the V
FP
pin to control the control gate voltage; the
sense amp time-out path is disabled. This allows for indirect measurements of the bit cells program and
erase threshold. If V
FP
< V
ZBRK
(breakdown voltage) the control gate will equal the V
FP
voltage.
If V
FP
> V
ZBRK
the control gate will be regulated by the following equation:
Vcontrol gate = V
ZBRK
+
0.44
×
(V
FP
V
ZBRK
)
0 = V
T
test disable
1 = V
T
test enable
FEEMCR
— Flash EEPROM Module Configuration Register
$00F5
Bit 7
6
5
4
3
2
1
Bit 0
0
0
0
0
0
0
0
BOOTP
RESET:
0
0
0
0
0
0
0
1
FEETST
— Flash EEPROM Module Test Register
$00F6
Bit 7
6
5
4
3
2
1
Bit 0
FSTE
GADR
HVT
FENLV
FDISVFP
VTCK
STRE
MWPR
RESET:
0
0
0
0
0
0
0
0
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