參數(shù)資料
型號(hào)： MB8117400B-60
廠商： Fujitsu Limited
英文描述： 4 M ×4 BITS Fast Page Mode Dynamic RAM(CMOS 4 M ×4 位快速頁面存取模式RAM)
中文描述： 4米× 4位快速頁面模式動(dòng)態(tài)RAM（的CMOS 4米× 4位快速頁面存取模式的RAM）
文件頁數(shù)： 22/28頁
文件大?。?/td> 473K
代理商： MB8117400B-60
22
MB8117400B-50/-60
Fig. 13 – RAS-ONLY REFRESH (WE = OE = “H” or “L”)
“H” or “L” level (excluding Address and DQ)
“H” or “L” level, “H
→
L” or “L
→
H” transition (Address and DQ)
HIGH-Z
ROW ADDRESS
t
RC
t
RAS
t
ASR
t
RAH
t
RPC
t
RP
t
CRP
t
OH
t
OFF
DESCRIPTION
Refresh of RAM memory cells is accomplished by performing a read, a write, or a read-modify-write cycle at each of 2048 row addresses
every 32-milliseconds. Three refresh modes are available: RAS-only refresh, CAS-before-RAS refresh, and hidden refresh.
RAS-only refresh is performed by keeping RAS Low and CAS High throughout the cycle; the row address to be refreshed is latched on the
falling edge of RAS. During RAS-only refresh, DQ pins are kept in a high-impedance state.
RAS
A
0
to A
10
CAS
DQ
(Input)
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
Fig. 14 – CAS-BEFORE-RAS REFRESH (ADDRESSES = WE = OE = “H” or “L”)
HIGH-Z
DESCRIPTION
CAS-before-RAS refresh is an on-chip refresh capability that eliminates the need for external refresh addresses. If CAS is held Low for the
specified setup time (t
CSR
) before RAS goes Low, the on-chip refresh control clock generators and refresh address counter are enabled. An
internal refresh operation automatically occurs and the refresh address counter is internally incremented in preparation for the next CAS-
before-RAS refresh operation.
RAS
CAS
WE
t
WSR
t
OH
t
OFF
t
WHR
t
CPN
t
CSR
t
CHR
t
RAS
t
RC
t
RP
t
RPC
“H” or “L” level (excluding Address and DQ)
“H” or “L” level, “H
→
L” or “L
→
H” transition (Address and DQ)
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
DQ
(Input)
相關(guān)PDF資料
PDF描述
MB8117405A-60 CMOS 4M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 4M ×4 位超級(jí)頁面存取模式動(dòng)態(tài)RAM)
MB8117405A-70 CMOS 4M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 4M ×4 位超級(jí)頁面存取模式動(dòng)態(tài)RAM)
MB8117405B-50 4 M ×4 BITS Fast Page Mode Dynamic RAM(CMOS 4 M ×4 位快速頁面存取模式RAM)
MB8117405B-60 4 M ×4 BITS Fast Page Mode Dynamic RAM(CMOS 4 M ×4 位快速頁面存取模式RAM)
MB8117800A-70 CMOS 2 M ×8BIT Fast Page Mode DRAM(CMOS 2 M ×8 位快速頁面存取模式動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB8117800A-60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM
MB8117800A-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM
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MB812.833 功能描述:ACCY MOUNT BMM 3/4 58A RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:*
MB-8120 制造商:Maxxtro 功能描述:
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