參數(shù)資料
型號(hào): MB8116405A-60
廠商: Fujitsu Limited
英文描述: CMOS 4M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 4M ×4 位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述: 的CMOS 4米× 4位超頁(yè)模式動(dòng)態(tài)RAM的CMOS(4米× 4位超級(jí)頁(yè)面存取模式動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 19/28頁(yè)
文件大?。?/td> 536K
代理商: MB8116405A-60
19
MB8116405A-60/MB8116405A-70
Fig. 11 – HYPER PAGE MODE WRITE CYCLE (Early Write)
V
IH
V
IL
RAS
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
CAS
A
0
to A
11
WE
DQ
(Input)
DQ
(Output)
“H” or “L”
DESCRIPTION
The hyper page mode write cycle is executed in the same manner as the hyper page mode read cycle except the states of WE and
OE are reversed. Data appearing on the DQ pins is latched on the falling edge of CAS and written into memory. During the hyper
page mode write cycle, including the delayed (OE) write and read-modify-write cycles, t
CWL
must be satisfied.
HIGH-Z
VALID
DATA IN
VALID
DATA IN
VALID
DATA IN
COL
ADD
ROW
ADD
COL
ADD
COL
ADD
t
RASP
t
RHCP
t
CHS
t
RP
t
CRP
t
RCD
t
CAS
t
PC
t
CP
t
RSH
t
CAS
t
CAH
t
RAL
t
ASC
t
CAH
t
ASC
t
CAH
t
ASC
t
AR
t
RAH
t
ASR
t
WCR
t
WCS
t
WCH
t
CWL
t
CWL
t
WCS
t
WCH
t
WCS
t
CWL
t
CWH
t
RWL
t
DH
t
DS
t
DH
t
DH
t
DS
t
DS
t
DHR
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