參數(shù)資料
型號(hào)： M5M4V16169DRT-8
廠商： Mitsubishi Electric Corporation
英文描述： 22182053
中文描述： 16MCDRAM：16米（100萬(wàn)字由16位）與16K的緩存內(nèi)存（1024字由16位）的SRAM
文件頁(yè)數(shù)： 63/64頁(yè)
文件大小： 737K
代理商： M5M4V16169DRT-8
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
63
Burst Mode Address
Initial Address
As2
BL
As1 As0
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Sequential
Interleaved
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
0
1
2
3
4
5
6
7
1
0
3
2
5
4
7
6
0
1
0
0
1
2
3
4
5
6
7
2
3
0
1
6
7
4
5
0
1
1
0
1
2
3
4
5
6
7
3
2
1
0
7
6
5
4
1
0
0
0
1
2
3
4
5
6
7
4
5
6
7
0
1
2
3
1
0
1
0
1
2
3
4
5
6
7
5
4
7
6
1
0
3
2
1
1
0
0
1
2
3
4
5
6
7
6
7
4
5
2
3
0
1
1
1
1
0
1
2
3
4
5
6
7
7
6
5
4
3
2
1
0
0
0
0
0
1
2
3
0
1
2
3
-
0
1
0
1
2
3
1
0
3
2
-
1
0
0
1
2
3
2
3
0
1
-
1
1
0
1
2
3
3
2
1
0
-
-
0
0
1
0
1
-
-
1
1
0
1
0
8
4
2
Note: When SRAM command is executed more than burst length, the Address
repeats with the same sequence.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V16169DTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
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