參數(shù)資料
型號: M5M4V16169DRT-8
廠商: Mitsubishi Electric Corporation
英文描述: 22182053
中文描述: 16MCDRAM:16米(100萬字由16位)與16K的緩存內(nèi)存(1024字由16位)的SRAM
文件頁數(shù): 56/64頁
文件大?。?/td> 737K
代理商: M5M4V16169DRT-8
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
K
CMd#
CS#
Page-Mode DRAM Write Transfer 1 (WB1->WB2->DRAM)
Buffer Write (DIN->WB1)
2
3
4
5
6
7
8
9
10
11
12
13
14
1
RAS#
CAS#
DTD#
Ad0-2
Ad3-11
WB1[0]
New Data
[from WB1(0-7)]
Old Data
**Col
Ad0-Ad2=Low
PCG
BW
DPD DPD
DES
DPD DPD
BW
3
ACT
BW
DWT1
BW
PCG
BW
DPD
BW
DNOP
BW
DNOP
BW
DPD
BW
BW
BW
BW
BW
DQ0-15
tRP
tRCD
Row
Row
tRASP
1
2
4
5
6
7
0
1
2
3
4
5
DRAM
SRAM
0
WB2 [0-7]
0
0
WB1 mask[0]
WB1[1]
1
1
WB1 mask[1]
WB1[2]
WB1 mask[2]
WB1[3]
WB1 masl[3]
WB1[4]
WB1 mask[4]
WB1[5]
WB1 mask[5]
WB1[6]
WB1 mask[6]
WB1[7]
WB1 mask[7]
2
2
3
3
4
4
5
6
7
detail
DNOP
DWT1
tRWL
tPC
Ad0-Ad2=Low
**Col
Next Data[WB1(0-1)]
56
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M5M4V16169DTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM