參數(shù)資料
型號(hào)： M59MR032D
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù)： 1/49頁(yè)
文件大?。?/td> 352K
代理商： M59MR032D
1/49
April 2001
M59MR032C
M59MR032D
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst)
1.8V Supply Flash Memory
I
SUPPLY VOLTAGE
– V
DD
= V
DDQ
= 1.65V to 2.0V for Program,
Erase and Read
– V
PP
= 12V for fast Program (optional)
I
MULTIPLEXED ADDRESS/DATA
I
SYNCHRONOUS / ASYNCHRONOUS READ
– Configurable Burst mode Read
– Page mode Read (4 Words Page)
– Random Access: 100ns
I
PROGRAMMING TIME
– 10μs by Word typical
– Double Word Programming Option
I
MEMORY BLOCKS
– Dual Bank Memory Array: 8 Mbit - 24 Mbit
– Parameter Blocks (Top or Bottom location)
I
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
I
BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power-up
– Any combination of Blocks can be protected
I
COMMON FLASH INTERFACE (CFI)
I
64 bit SECURITY CODE
I
ERASE SUSPEND and RESUME MODES
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M59MR032C: A4h
– Bottom Device Code, M59MR032D: A5h
BGA
μ
BGA
LFBGA54 (ZC)
10 x 4 ball array
μBGA46 (GC)
10 x 4 ball array
Figure 1. Logic Diagram
AI90109
5
A16-A20
W
ADQ0-ADQ15
VDD
M59MR032C
M59MR032D
E
VSS
16
G
RP
WP
VDDQVPP
L
K
WAIT
BINV
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