參數(shù)資料
型號(hào): M36WT864T70ZA6T
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述: 64兆位4Mb的x16插槽,多銀行,突發(fā)閃存和8兆位的SRAM為512k x16,內(nèi)存產(chǎn)品多
文件頁(yè)數(shù): 82/92頁(yè)
文件大?。?/td> 624K
代理商: M36WT864T70ZA6T
M36WT864TF, M36WT864BF
82/92
Figure 34. Locking Operations Flowchart and Pseudo Code
Write
01h, D0h or 2Fh
AI06176
Read Block
Lock States
YES
NO
Locking
change
confirmed
Start
Write 60h
locking_operation_command (address, lock_operation) {
writeToFlash (bank_address, 0x60) ; /*configuration setup*/
if (readFlash (address) ! = locking_state_expected)
error_handler () ;
/*Check the locking state (see Read Block Signature table )*/
writeToFlash (bank_address, 0xFF) ; /*Reset to Read Array mode*/
}
Write FFh
Write 90h
End
if (lock_operation==LOCK) /*to protect the block*/
writeToFlash (address, 0x01) ;
else if (lock_operation==UNLOCK) /*to unprotect the block*/
writeToFlash (address, 0xD0) ;
else if (lock_operation==LOCK-DOWN) /*to lock the block*/
writeToFlash (address, 0x2F) ;
writeToFlash (bank_address, 0x90) ;
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M36WT864TFZA 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BFZA 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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