參數(shù)資料
型號(hào)： M36WT864T70ZA6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述： 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多
文件頁數(shù)： 5/92頁
文件大?。?/td> 624K
代理商： M36WT864T70ZA6T
5/92
M36WT864TF, M36WT864BF
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 16. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 9. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 10. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 17. Device Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 18. Flash DC Characteristics - Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 19. Flash DC Characteristics - Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 20. SRAM DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 11. Flash Asynchronous Random Access Read AC Waveforms. . . . . . . . . . . . . . . . . . . . . 45
Figure 12. Flash Asynchronous Page Read AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 21. Flash Asynchronous Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 13. Flash Synchronous Burst Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 14. Flash Single Synchronous Read AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 15. Flash Clock input AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 22. Flash Synchronous Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 16. Flash Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Table 23. Flash Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 17. Flash Write AC Waveforms, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 24. Flash Write AC Characteristics, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 18. Flash Reset and Power-up AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Table 25. Flash Reset and Power-up AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 19. SRAM Address Controlled, Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Figure 20. SRAM Chip Enable or Output Enable Controlled, Read AC Waveforms. . . . . . . . . . . . 56
Figure 21. SRAM Chip Enable or UBS/LBS Controlled, Standby AC Waveforms . . . . . . . . . . . . . 57
Table 26. SRAM Read and Standby AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Figure 22. SRAM Write AC Waveforms, Write Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 23. SRAM Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 24. SRAM Write AC Waveforms, UB/LB Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 27. SRAM Write AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Figure 25. SRAM Low VDD Data Retention AC Waveforms, E1S Controlled. . . . . . . . . . . . . . . . . 61
Figure 26. SRAM Low VDD Data Retention AC Waveforms, E2S Controlled. . . . . . . . . . . . . . . . . 61
Table 28. SRAM Low VDD Data Retention Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Figure 27. Stacked LFBGA96 - 8x14mm, 8x10ball array, 0.8mm pitch, Bottom View Package Outline
62
Table 29. Stacked LFBGA96 - 8x14mm, 8x10 ball array, 0.8mm pitch, Package Mechanical Data62
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 30. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 31. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
APPENDIX A. FLASH BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
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M36WT864TFZA 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36WT864T85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF70ZA6T 功能描述:組合存儲(chǔ)器 64M (4Mx16) 70ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray
M36WT864TFZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT8B10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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