參數(shù)資料
型號(hào)： M36WT864T70ZA6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述： 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多
文件頁(yè)數(shù)： 39/92頁(yè)
文件大小： 624K
代理商： M36WT864T70ZA6T
39/92
M36WT864TF, M36WT864BF
FLASH PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14. In the Flash memory the maximum number
of Program/ Erase cycles depends on the voltage
supply used.
Table 14. Flash Program, Erase Times and Endurance Cycles
Note: 1. T
A
= –40 to 85°C; V
DD
= 1.65V to 2.2V; V
DDQ
= 1.65V to 3.3V.
2. The difference between Preprogrammed and not preprogrammed is not significant (30ms).
3. Excludes the time needed to execute the command sequence.
4. t.b.a. = to be announced
Parameter
Condition
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit
V
P
=
D
Parameter Block (4 KWord) Erase
(2)
0.3
1
2.5
s
Main Block (32 KWord) Erase
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank (4Mbit) Erase
Preprogrammed
3
s
Not Preprogrammed
4.5
s
Parameter Block (4 KWord) Program
(3)
40
ms
Main Block (32 KWord) Program
(3)
300
ms
Word Program
(3)
10
10
100
μs
Program Suspend Latency
5
10
μs
Erase Suspend Latency
5
20
μs
Program/Erase Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
V
P
=
P
Parameter Block (4 KWord) Erase
0.3
2.5
s
Main Block (32 KWord) Erase
0.9
4
s
Bank (4Mbit) Erase
3.5
s
Bank (4Mbit) Program (Quad-Enhanced Factory Program)
t.b.a.
(4)
s
4Mbit Program
Quadruple Word
510
ms
Word/ Double Word/ Quadruple Word Program
(3)
8
100
μs
Parameter Block (4 KWord)
Program
(3)
Quadruple Word
8
ms
Word
32
ms
Main Block (32 KWord) Program
(3)
Quadruple Word
64
ms
Word
256
ms
Program/Erase Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
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PDF描述
M36WT864TFZA 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BFZA 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36WT864T85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF70ZA6T 功能描述:組合存儲(chǔ)器 64M (4Mx16) 70ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray
M36WT864TFZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT8B10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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