參數(shù)資料
型號： M36WT864T70ZA6T
廠商： 意法半導體
英文描述： 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述： 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多
文件頁數(shù)： 43/92頁
文件大?。?/td> 624K
代理商： M36WT864T70ZA6T
43/92
M36WT864TF, M36WT864BF
Table 18. Flash DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. V
DD
Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±1
μA
I
DD1
Supply Current
Asynchronous Read (f=6MHz)
E = V
IL
, G = V
IH
3
6
mA
Supply Current
Synchronous Read (f=40MHz)
4 Word
6
13
mA
8 Word
8
14
mA
Continuous
6
10
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
7
16
mA
8 Word
10
18
mA
Continuous
13
25
mA
I
DD2
Supply Current
(Reset)
RP = V
SS
± 0.2V
10
50
μA
I
DD3
Supply Current (Standby)
E = V
DD
± 0.2V
10
50
μA
I
DD4
Supply Current (Automatic
Standby)
E = V
IL
, G = V
IH
10
50
μA
I
DD5(1)
Supply Current (Program)
V
PPF
= V
PPH
8
15
mA
V
PPF
= V
DD
10
20
mA
Supply Current (Erase)
V
PPF
= V
PPH
8
15
mA
V
PPF
= V
DD
10
20
mA
I
DD6 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
Read in another Bank
13
26
mA
Program/Erase in one
Bank, Synchronous
Read in another Bank
16
30
mA
I
DD7(1)
Supply Current Program/ Erase
Suspended (Standby)
E = V
DD
± 0.2V
10
50
μA
I
PP1(1)
V
PPF
Supply Current (Program)
V
PPF
= V
PPH
2
5
mA
V
PPF
= V
DD
0.2
5
μA
V
PPF
Supply Current (Erase)
V
PPF
= V
PPH
2
5
mA
V
PPF
= V
DD
0.2
5
μA
I
PP2
V
PPF
Supply Current (Read)
V
PPF
= V
PPH
100
400
μA
V
PPF
≤
V
DD
0.2
5
μA
I
PP3(1)
V
PPF
Supply Current (Standby)
V
PPF
≤
V
DD
0.2
5
μA
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M36WT864T85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF70ZA6T 功能描述:組合存儲器 64M (4Mx16) 70ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray
M36WT864TFZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT8B10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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