參數(shù)資料
型號: M36WT864T70ZA6T
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述: 64兆位4Mb的x16插槽,多銀行,突發(fā)閃存和8兆位的SRAM為512k x16,內(nèi)存產(chǎn)品多
文件頁數(shù): 76/92頁
文件大?。?/td> 624K
代理商: M36WT864T70ZA6T
M36WT864TF, M36WT864BF
76/92
APPENDIX C. FLASH FLOWCHARTS AND PSEUDO CODES
Figure 28. Program Flowchart and Pseudo Code
Note: 1. Status check of SR1 (Protected Block), SR3 (V
PP
(V
PPF
) Invalid) and SR4 (Program Error) can be made after each program oper-
ation or after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
Write 40h or 10h
AI06170
Start
Write Address
& Data
Read Status
Register
YES
NO
SR7 = 1
YES
NO
SR3 = 0
NO
SR4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
program_command (addressToProgram, dataToProgram) {:
writeToFlash (bank_address, 0x40) ;
/*or writeToFlash (bank_address, 0x10) ; */
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
YES
End
YES
NO
SR1 = 0
Program to Protected
Block Error (1, 2)
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
}
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