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參數(shù)資料
| 型號： | M29W160ET90ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CLAMP |
| 中文描述： | 16兆位（含2Mb x8或1兆x16插槽，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 5/40頁 |
| 文件大?。?/td> | 665K |
| 代理商： | M29W160ET90ZA6T |
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M29W160ET, M29W160EB
SUMMARY DESCRIPTION
The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16)
non-volatile memory that can be read, erased and
reprogrammed. These operations can be per-
formed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory defaults to its
Read mode where it can be read in the same way
as a ROM or EPROM.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
The blocks in the memory are asymmetrically ar-
ranged, see Figures 5 and 6, Block Addresses.
The first or last 64 KBytes have been divided into
four additional blocks. The 16 KByte Boot Block
can be used for small initialization code to start the
microprocessor, the two 8 KByte Parameter
Blocks can be used for parameter storage and the
remaining 32K is a small Main Block where the ap-
plication may be stored.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered TSOP48 (12 x 20mm) and
TFBGA48 (0.8mm pitch) packages. The memory
is supplied with all the bits erased (set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI06849B
20
A0-A19
W
DQ0-DQ14
VCC
M29W160ET
M29W160EB
E
VSS
15
G
RP
DQ15A–1
RB
BYTE
A0-A19
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W160DB70ZA1T | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
| M29W160DB70ZA6T | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
| M29W160DB90N1T | Dual Positive-Edge-Triggered D-Type Flip-Flop 8-DSBGA -40 to 85 |
| M29W160DB90N6T | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
| M29W160DB90ZA1T | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W160FB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory |
| M29W160FB70N3E | 功能描述:IC FLASH 16MB 70NS 48TSOP AUTO RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| M29W160FB70N3F | 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| M29W160FB70ZA3F | 制造商:Micron Technology Inc 功能描述: |
| M29W160FB80ZA3SE | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays |
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