參數(shù)資料
型號(hào): M29W160ET90ZA6T
廠商: 意法半導(dǎo)體
英文描述: CLAMP
中文描述: 16兆位(含2Mb x8或1兆x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁(yè)數(shù): 40/40頁(yè)
文件大?。?/td> 665K
代理商: M29W160ET90ZA6T
M29W160ET, M29W160EB
40/40
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W160FB 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory
M29W160FB70N3E 功能描述:IC FLASH 16MB 70NS 48TSOP AUTO RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
M29W160FB70N3F 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
M29W160FB70ZA3F 制造商:Micron Technology Inc 功能描述:
M29W160FB80ZA3SE 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays