參數(shù)資料
型號(hào): M29W160ET90ZA6T
廠商: 意法半導(dǎo)體
英文描述: CLAMP
中文描述: 16兆位(含2Mb x8或1兆x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁(yè)數(shù): 31/40頁(yè)
文件大?。?/td> 665K
代理商: M29W160ET90ZA6T
31/40
M29W160ET, M29W160EB
Table 23. CFI Query System Interface Information
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
38h
0036h
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
3Ah
0000h
V
PP
[Programming] Supply Minimum Program/Erase voltage
NA
1Eh
3Ch
0000h
V
PP
[Programming] Supply Maximum Program/Erase voltage
NA
1Fh
3Eh
0004h
Typical timeout per single Byte/Word program = 2
n
μs
16μs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2
n
μs
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
44h
0000h
Typical timeout for full chip erase = 2
n
ms
NA
23h
46h
0004h
Maximum timeout for Byte/Word program = 2
n
times typical
256μs
24h
48h
0000h
Maximum timeout for write buffer program = 2
n
times typical
NA
25h
4Ah
0003h
Maximum timeout per individual block erase = 2
n
times typical
8s
26h
4Ch
0000h
Maximum timeout for chip erase = 2
n
times typical
NA
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