參數(shù)資料
型號： M29W004B
廠商： 意法半導(dǎo)體
英文描述： 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲器)
中文描述： 的4Mb（512KB的× 8，引導(dǎo)塊）低電壓單電源閃存（4Mb的閃速存儲器）
文件頁數(shù)： 9/30頁
文件大小： 199K
代理商： M29W004B
Mne.
Instr.
Cyc.
1st Cyc.
2nd Cyc.
3rd Cyc.
4th Cyc.
5th Cyc.
6th Cyc.
7th Cyc.
RD
(2,4)
Read/Reset
Memory
Array
1+
Addr.
(3,7)
X
Read Memory Array until a new write cycle is initiated.
Data
F0h
3+
Addr.
(3,7)
5555h
2AAAh
5555h
Read Memory Array until a newwrite cycle
is initiated.
Data
AAh
55h
F0h
AS
(4)
Auto Select
3+
Addr.
(3,7)
5555h
2AAAh
5555h
Read Electronic Signature or Block
Protection Status until a new write cycle is
initiated. See Note 5 and 6.
Data
AAh
55h
90h
PG
Program
4
Addr.
(3,7)
5555h
2AAAh
5555h
Program
Address
Read Data Polling or Toggle Bit
until Program completes.
Data
AAh
55h
A0h
Program
Data
BE
BlockErase
6
Addr.
(3,7)
5555h
2AAAh
5555h
5555h
2AAAh
Block
Address
Additional
Block
(8)
Data
AAh
55h
80h
AAh
55h
30h
30h
CE
Chip Erase
6
Addr.
(3,7)
5555h
2AAAh
5555h
5555h
2AAAh
5555h
Note 9
Data
AAh
55h
80h
AAh
55h
10h
ES
(10)
Erase
Suspend
1
Addr.
(3,7)
X
Read until Toggle stops, then read all the dataneeded from any
Block(s) not being erased thenResume Erase.
Data
B0h
ER
Erase
Resume
1
Addr.
(3,7)
X
Read Data Polling or ToggleBits until Erase completes or Erase
is suspended another time
Data
30h
Notes:
1. Commands not interpreted in this table will default to read array mode.
2. Await of t
is necessary after a Read/Reset command if the memory was in an Erase or Program mode
before starting any new operation (See Table 14 and Figure 9).
3. X = Don’t Care.
4. The first cycles of the RD or AS instructions are followed by read operations.Any number of read cycles can occur after
the command cycles.
5. SignatureAddress bitsA0,A1 at V
IL
willoutput Manufacturer code (20h). Address bits A0at V
IH
andA1 at V
IL
will output
Device code.
6. Block Protection Address:A0 at V
, A1at V
and A13-A18within the Block will outputthe Block Protection status.
7. For Coded cycles address inputs A15-A18are don’t care.
8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last writeentry, timeout status
can be verified throughDQ3 value (see Erase Timer Bit DQ3description). When full command is entered, read Data Polling
or Togglebit until Erase is completed or suspended.
9. Read Data Polling, Toggle bits or RB until Erase completes.
10.During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased.
Table8. Instructions
(1)
9/30
M29W004T M29W004B
相關(guān)PDF資料
PDF描述
M29W004T 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲器)
M29W008AB 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲器)
M29W008AT 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲器)
M29W008B 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導(dǎo)入塊)低壓單電源閃速存儲器)
M29W010B45K6F 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W004B-100N1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-100N5TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-100N6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-120N1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-120N5TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*