參數(shù)資料
型號(hào)： M29W004B
廠(chǎng)商： 意法半導(dǎo)體
英文描述： 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲(chǔ)器)
中文描述： 的4Mb（512KB的× 8，引導(dǎo)塊）低電壓?jiǎn)坞娫撮W存（4Mb的閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 1/30頁(yè)
文件大?。?/td> 199K
代理商： M29W004B
AI02063
19
A0-A18
W
DQ0-DQ7
VCC
M29W004T
M29W004B
E
VSS
8
G
RP
RB
Figure 1. LogicDiagram
M29W004T
M29W004B
4 Mbit (512Kb x8, Boot Block)
Low Voltage Single Supply Flash Memory
2.7V to 3.6VSUPPLYVOLTAGEfor
PROGRAM, ERASEand READ OPERATIONS
FASTACCESS TIME: 100ns
FASTPROGRAMMING TIME:10
μ
s typical
PROGRAM/ERASECONTROLLER (P/E.C.)
– ProgramByte-by-Byte
– StatusRegister bits and Ready/BusyOutput
MEMORYBLOCKS
– BootBlock (Top or Bottomlocation)
– Parameterand Main blocks
BLOCK, MULTI-BLOCKand CHIPERASE
MULTI BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program anotherBlockduring
Erase Suspend
LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
100,000 PROGRAM/ERASECYCLES per
BLOCK
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– Device Code, M29W004T:EAh
– Device Code, M29W004B:EBh
DESCRIPTION
The M29W004 is a non-volatilememory that may
be erasedelectricallyat theblock or chipleveland
programmed in-system on a Byte-by-Byte basis
using only a single 2.7V to 3.6V V
CC
supply. For
Programand Erase operationsthe necessaryhigh
voltagesare generated internally. The device can
also be programmedin standard programmers.
The arraymatrix organisationallows each blockto
be erased and reprogrammed without affecting
otherblocks. Blocks can be protectedagainst pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application. Each block can be programmed
and erased over 100,000 cycles.
October 1998
1/30
TSOP40 (N)
10 x 20 mm
相關(guān)PDF資料
PDF描述
M29W004T 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲(chǔ)器)
M29W008AB 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲(chǔ)器)
M29W008AT 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲(chǔ)器)
M29W008B 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導(dǎo)入塊)低壓?jiǎn)坞娫撮W速存儲(chǔ)器)
M29W010B45K6F 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W004B-100N1TR 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-100N5TR 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-100N6TR 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-120N1TR 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-120N5TR 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*