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參數(shù)資料
| 型號： | M29W004B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲器) |
| 中文描述： | 的4Mb（512KB的× 8，引導(dǎo)塊）低電壓單電源閃存（4Mb的閃速存儲器） |
| 文件頁數(shù)： | 22/30頁 |
| 文件大?。?/td> | 199K |
| 代理商： | M29W004B |
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Sym-
bol
Parameter
M29W004T / M29W004B
Unit
-90
-100
V
CC
= 3.0V to 3.6V
C
L
= 30pF
V
CC
= 2.7V to 3.6V
C
L
= 30pF
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0
30
1.0
30
sec
t
EHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0
30
1.0
30
sec
t
Q7VQV
Q7 Valid to Output Valid(Data Polling)
35
40
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Write Enable High to Output Valid (Chip Erase)
1.0
30
1.0
30
sec
t
EHQV
Chip Enable High to Output Valid(Program)
10
2400
10
2400
μ
s
Chip Enable High to Output Valid(Chip Erase)
1.0
30
1.0
30
sec
Note:
1. All other timings are defined in ReadAC Characteristics table.
Table 17A. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to85
°
C)
Sym-
bol
Parameter
M29W004T / M29W004B
Unit
-120
-150
V
CC
= 2.7V to 3.6V
V
CC
= 2.7V to 3.6V
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0
30
1.0
30
sec
t
EHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0
30
1.0
30
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
50
55
ns
t
WHQV
Write Enable High to Output Valid(Program)
10
2400
10
2400
μ
s
Write Enable High to Output Valid(Chip Erase)
1.0
30
1.0
30
sec
t
EHQV
Chip Enable High to OutputValid (Program)
10
2400
10
2400
μ
s
Chip Enable High to OutputValid (Chip Erase)
1.0
30
1.0
30
sec
Note:
1. All other timings are defined in Read AC Characteristicstable.
Table 17B. Data Polling and ToggleBit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
22/30
M29W004T, M29W004B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W004T | 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲器) |
| M29W008AB | 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲器) |
| M29W008AT | 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲器) |
| M29W008B | 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導(dǎo)入塊)低壓單電源閃速存儲器) |
| M29W010B45K6F | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W004B-100N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004B-100N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004B-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004B-120N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004B-120N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
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