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參數(shù)資料
| 型號： | M12L64164A-5BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, VBGA-54 |
| 文件頁數(shù)： | 16/45頁 |
| 文件大小： | 831K |
| 代理商： | M12L64164A-5BG |
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ES MT
Self refresh entry command
(CS ,RAS ,CAS , CKE = Low ,
WE
= High)
After the command execution, self refresh operation continues while CKE
remains low. When CKE goes to high, the M12L64164A exits the self refresh mode.
During self refresh mode, refresh interval and refresh operation are performed
internally, so there is no need for external control.
Before executing self refresh, all banks must be precharged.
Burst stop command
(CS ,
WE
= Low,RAS ,CAS = High)
This command terminates the current burst operation.
Burst stop is valid at every burst length.
No operation
(CS = Low ,RAS ,CAS ,
WE
= High)
This command is not a execution command. No operations begin or terminate by
this command.
M12L64164A
Elite Semiconductor Memory Technology Inc.
Revision
:
3.0
Publication Date
:
Mar. 2007
16/45
CLK
CKE
A12, A13
(Bank select)
A10
Add
CLK
CKE
(Bank select)
A10
Add
H
Fig. 7 Self refresh entry
command
Fig. 8 Burst stop command
CLK
CKE
A12, A13
(Bank select)
A10
Add
H
Fig. 9 No operation
CS
RAS
WE
CAS
CS
RAS
WE
CAS
CS
RAS
WE
CAS
相關PDF資料 |
PDF描述 |
|---|---|
| M12L64164A-6BG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-7BG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-5BG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-5TG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-6BG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M12L64164A-5BG2Y | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks |
| M12L64164A-5BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-5TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-5TG2Y | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks |
| M12L64164A-5TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM |
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