參數(shù)資料
型號(hào): M12L2561616A-6BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 4M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
封裝: 8 X 13 MM, LEAD FREE, BGA-54
文件頁(yè)數(shù): 44/44頁(yè)
文件大?。?/td> 908K
代理商: M12L2561616A-6BG
ES MT
M12L2561616A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
Publication Date
:
Aug. 2007
44/44
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The contents contained in this document are believed to be accurate at the time of publication.
ESMT assumes no responsibility for any error in this document, and reserves the right to change
the products or specification in this document without notice.
The information contained herein is presented only as a guide or examples for the application of
our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights,
or other intellectual property rights of third parties which may result from its use. No license, either
express , implied or otherwise, is granted under any patents, copyrights or other intellectual
property rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To minimize risks
associated with customer's application, adequate design and operating safeguards against injury,
damage, or loss from such failure, should be provided by the customer when making application
designs.
ESMT's products are not authorized for use in critical applications such as, but not limited to, life
support devices or system, where failure or abnormal operation may directly affect human lives or
cause physical injury or property damage. If products described here are to be used for such
kinds of application, purchaser must do its own quality assurance testing appropriate to such
applications.
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